TYSEMI 2SB1114

Product specification
2SB1119
Features
Very small size making it easy to provide highdensity,
small-sized hybrid IC’
s.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-25
V
Collector-emitter voltage
VCEO
-25
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-1
A
Collector current (pulse)
ICP
-2
A
Collector dissipation
PC
500
mW
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector cutoff current
ICBO
VCB = -20V , IE = 0
Emitter cutoff current
IEBO
VCB = -4V , IE = 0
DC current Gain
hFE
Gain bandwidth product
Min
VCE = -2V , IC = -50mA
100
VCE = -2V , IC = -1A
40
VCE = -10V , IC = -50mA
fT
Typ
Max
Unit
-0.1
ìA
-0.1
ìA
560
180
MHz
Collector-emitter saturation voltage
VCE(sat) IC = -500mA , IB = -50mA
-0.15
-0.7
V
Base-emitter saturation voltage
VBE(sat) IC = -500mA , IB = -50mA
-0.85
-1.2
V
Collector-base breakdown voltage
V(BR)CBO IC = -10ìA , IE = 0
-25
V
Collector-emitter breakdown voltage
V(BR)CEO IC = -1mA , RBE =
-25
V
Emitter-base breakdown voltage
V(BR)EBO IE = -10ìA , IC = 0
-5
V
Output capacitance
Cob
VCB = -10V , f = 1MHz
52
pF
hFE Classification
BB
Marking
Rank
R
S
T
U
hFE
100 200
140 280
200 400
280 560
http://www.twtysemi.com
[email protected]
4008-318-123
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