Transistors SMD Type Power Transistor 2SD1733 TO-252 Features 6.50 +0.2 5.30-0.2 High VCEO, VCEO=80V . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High IC, IC=1A (DC) . NPN silicon transistor +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65 -0.1 Epitaxial planer type +0.28 1.50 -0.1 +0.2 9.70 -0.2 Low VCE (sat) . +0.15 0.50 -0.15 Good hFE linearity . 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V IC 1 A IC (Pulse) * 2 A 1 W 10 W Collector current Collector power dissipation PC Tc = 25 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * Pw=20ms. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage BVCBO IC=50ìA 120 V Collector-emitter voltage BVCEO IC=1mA 80 V Emitter-base voltage BVEBO IE=50ìA 5 V Collector cutoff current ICBO VCB=100V 1 ìA Emitter cutoff current IEBO VEB=4V 1 ìA hFE VCE=3V,IC=0.5A Forward current transfer ratio VCE(sat) IC=500mA,IB=20mA Collector-emitter saturation voltage Transition frequency fT Output capacitance Cob 82 390 0.15 0.4 V VCE=10V, IE= -50mA, f=100MHz 100 MHz VCB=10V, IE=0A, f=1MHz 20 pF hFE Classification Rank P Q R hFE 82 180 120 270 180 390 www.kexin.com.cn 1