KEXIN 2SK1581

MOSFET
SMD Type
MOS Field Effect Transistor
2SK1581
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
0.4
3
1
Possible to reduce the number of parts by omitting the bias resistor
0.55
+0.1
1.3-0.1
Not necessry to consider driving current because of its thgh input impedance.
+0.1
2.4-0.1
Can be driven by Ics having a 3V single power supply.
2
+0.1
0.95-0.1
+0.1
1.9-0.1
1.Base
1 GATE
2.Emitter
2 SOURCE
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
3.collector
3 DRAIN
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
16
V
Gate to source voltage
VGSS
16
V
Drain current (DC)
ID
200
mA
Drain current(pulse) *
ID
400
mA
Power dissipation
PD
200
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
10ms, duty cycle
mW
5%
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Testconditons
IDSS
VDS=16V,VGS=0
IGSS
VGS= 3V,VDS=0
Min
Typ
10
10
VGS(off) VDS=3.0V,ID=10 A
0.9
1.2
VDS=3.0V,ID=10mA
20
70
Yfs
RDS(on)
Max
1.5
VGS=2.5V,ID=1mA
3.2
5.0
2.2
3.0
27
VDS=3.0V,VGS=0,f=1MHZ
A
A
V
ms
VGS=4.0V,ID=1mA
Ciss
Unit
pF
Output capacitance
Coss
37
pF
Reverse transfer capacitance
Crss
8
pF
Turn-on delay time
td(on)
100
ns
300
ns
210
ns
240
ns
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
ID=10mA,VGS(on)=3.0V,RL=300
,VDD=3.0V,RG=10
Marking
Marking
G14
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