MOSFET SMD Type MOS Field Effect Transistor 2SK2158 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 consider driving current. 0.55 Because of high input impedance, there is no need to +0.1 1.3-0.1 +0.1 2.4-0.1 Capable of drive gate with 1.5 V 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Bias resistance can be omitted, enabling reduction in total +0.05 0.1-0.01 1.Base 1 GATE 2.Emitter 2 SOURCE +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 number of parts. 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 50 V Gate to source voltage VGSS 7.0 V ID 0.1 A Idp * 0.2 A PD 200 Drain current Power dissipation Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW mW 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance IDSS VDS=50V,VGS=0 IGSS VGS= 7.0V,VDS=0 VDS=3V,ID=10mA 20 Yfs Max Unit 1.0 A 0.7 1.1 VGS=1.5V,ID=1.0mA 32 50 16 20 VGS=4.0V,ID=1.0mA 12 15 Ciss Reverse transfer capacitance Crss Turn-on delay time A V ms RDS(on) VGS=2.5V,ID=10mA Coss 6 pF 8 pF 1 pF td(on) 9 ns tr 48 ns 21 ns 31 ns td(off) Fall time Typ 3.0 0.5 Input capacitance Turn-off delay time Min VGS(off) VDS=3V,ID=10 A Output capacitance Rise time Testconditons tf VDS=3V,VGS=0,f=1MHZ ID=20mA,VGS(on)=3V,RL=150 ,RG=10 ,VDD=3V Marking Marking G23 www.kexin.com.cn 1