IC MOSFET SMD Type MOS Field Effect Transistor 2SK3225 TO-252 Low Ciss : Ciss = 2100 pF TYP. +0.1 0.80-0.1 Built-in Gate Protection Diode 2.3 +0.1 0.60-0.1 3.80 MAX. (VGS = 4.0 V, ID = 17 A) +0.8 0.50-0.7 +0.15 5.55-0.15 RDS(on)2 = 27 m Unit: mm +0.1 2.30-0.1 0.127 max +0.25 2.65-0.1 MAX. (VGS = 10 V, ID = 17A) +0.15 0.50-0.15 RDS(on)1 = 18 m +0.2 9.70-0.2 Low On-State Resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.28 1.50-0.1 Features 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDSS 60 V Drain to source voltage VGSS(AC) Gate to source voltage VGSS(DC) ID Drain current Idp * Power dissipation TC=25 PD 20 +20,-10 34 A 136 A 40 W 2.0 TA=25 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW V V 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Drain cut-off current IDSS VDS=60V,VGS=0 Gate leakage current IGSS VGS= 20V,VDS=0 Gate to source cut off voltage VGS(off) VDS=10V,ID=1mA 1..0 1.5 Forward transfer admittance Yfs VDS=10V,ID=17A 13 27 Drain to source on-state resistance RDS(on) VGS=10V,ID=17A VGS=4V,ID=17A Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Turn-on delay time Rise time tr Turn-off delay time toff Fall time tf Max Unit 10 A 10 2.0 A V S 13 18 m 18 27 m 2100 pF 550 pF Crss 220 pF ton 32 ns 300 ns VDS=10V,VGS=0,f=1MHZ ID=17A,VGS(on)=10V,RG=10 ,VDD=30V 110 ns 140 ns www.kexin.com.cn 1