MOSFET SMD Type MOS Field Effect Transistor 2SJ492 TO-263 +0.1 1.27-0.1 RDS(on)2 = 185 m (MAX.) (VGS =-4 V, ID =-10 A) Low Ciss: Ciss = 1210 pF (TYP.) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Built-in gate protection diode +0.2 4.57-0.2 5.60 (MAX.) (VGS = -10 V, ID = -10 A) +0.1 1.27-0.1 +0.2 2.54-0.2 +0.1 0.81-0.1 2.54 5.08 +0.2 15.25-0.2 RDS(on)1 = 100 m +0.2 8.7-0.2 Low on-state resistance Unit: mm +0.2 2.54-0.2 Features +0.2 0.4-0.2 +0.1 -0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS -60 V Gate to source voltage (AC) VGSS Gate to source voltage (DC) *1 VGSS Drain current (DC) ID Drain current(pulse) *2 Power dissipation ID 20 -20 20 80 V V A A TA=25 PD 1.5 W TC=25 PD 70 W Channel temperature Tch 150 Storage temperature Tstg -55 to +150 Rth(ch-C) 1.79 /W Rth(ch-A) 83.3 /W Channel to Case Channel to Ambient *1 f = 20 kHz, Duty Cycle * 2 PW 10 s; d 10% (+Side) 1%. www.kexin.com.cn 1 MOSFET SMD Type 2SJ492 Electrical Characteristics Ta = 25 Parameter Testconditons Drain to source breakdown voltage VDSS ID=-10mA,VGS=0 Gate to source breakdown voltage VGSS IG = Drain cut-off current IDSS VDS=-60V,VGS=0 Gate leakage current IGSS VGS= Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance -10 20V,VDS=0 10 12 Ciss Reverse transfer capacitance Crss Turn-on delay time www.kexin.com.cn V 5.0 RDS(on) Unit V 10 VDS=-10V,ID=-10A Yfs Max -20 -1.5 Coss Fall time A ,VDS=0 Typ -1.0 Input capacitance Turn-off delay time 200 Min VGS(off) VDS=-10V,ID=-1mA Output capacitance Rise time 2 Symbol A A -2.0 V S VGS=-10V,ID=-10A 70 100 m VGS=-4.0V,ID=-10A 120 185 m 1210 pF 520 pF 180 pF td(on) 16 ns tr 140 ns 90 ns 80 ns td(off) tf VDS=-10V,VGS=0,f=1MHZ VDD=-30V,VGS(on)=-10V,ID=--10A ,RG=10