KEXIN 2SK3712

IC
MOSFET
SMD Type
MOS Field Effect Transistor
2SK3712
TO-252
Features
High voltage: VDSS = 250 V
Unit: mm
+0.1
2.30-0.1
+0.8
0.50-0.7
Low Ciss: Ciss = 450 pF TYP. (VDS = 10 V, ID = 0 A)
Built-in gate protection diode
2.3
+0.1
0.60-0.1
0.127
max
+0.15
5.55-0.15
+0.1
0.80-0.1
+0.28
1.50-0.1
MAX. (VGS = 10 V, ID = 4.5 A)
+0.15
0.50-0.15
RDS(on) = 0.58
+0.2
9.70-0.2
Low on-state resistance
3.80
30 V
+0.25
2.65-0.1
Gate voltage rating:
+0.15
1.50-0.15
+0.15
6.50-0.15
+0.2
5.30-0.2
1 Gate
+0.15
4.60-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
250
V
Gate to source voltage
VGSS
30
V
ID
9.0
A
Idp *
27
A
Drain current
Power dissipation
TA=25
1.0
PD
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
W
40
TC=25
10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Drain cut-off current
IDSS
VDS=250V,VGS=0
Gate leakage current
IGSS
VGS= 30V,VDS=0
VGS(off)
VDS=10V,ID=1mA
2.5
Yfs
VDS=10V,ID=4.5A
3
RDS(on)
VGS=10V,ID=4.5A
Gate cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Ciss
Typ
10
10
3.5
4.5
6
0.4
450
VDS=10V,VGS=0,f=1MHZ
Max
Unit
A
A
V
S
0.58
pF
Output capacitance
Coss
100
pF
Reverse transfer capacitance
Crss
40
pF
Turn-on delay time
ton
8
ns
Rise time
tr
Turn-off delay time
toff
Fall time
tf
Total Gate Charge
QG
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
ID=4.5A,VGS(on)=10V,RG=0 ,VDD=125V
VDD = 200V
VGS = 10 V
ID =9.0A
8
ns
21
ns
6
ns
14
nC
3
nC
7
nC
www.kexin.com.cn
1