KEXIN 2SK3637

Transistors
IC
SMD Type
Silicon N-channel Power MOSFET
2SK3637
1 .2 7 -0+ 0.1.1
TO-263
Features
Low on-resistance, low Qg
Unit: mm
+0.1
1.27-0.1
+0.2
4.57-0.2
5 .2 8 -0+ 0.2.2
+0.1
0.81-0.1
2.54
2.54
+0.2
-0.2
+0.1
5.08-0.1
1 5 .2 5 -0+ 0.2.2
0.1max
+0.1
1.27-0.1
2 .5 4 -0+ 0.2.2
8 .7 -0+ 0.2.2
5 .6 0
High avalanche resistance
+0.2
0.4-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain-source surrender voltage
VDSS
200
V
Gate-source surrender voltage
VGSS
30
V
Drain current
ID
50
A
Peak drain current
IDP
200
A
Avalanche energy capability
EAS
2 000
mJ
Power dissipation Ta = 25
PD
Power dissipation
3
W
100
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
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1
Transistors
IC
SMD Type
2SK3637
Electrical Characteristics Ta = 25
Parameter
Testconditons
Gate-drain surrender voltage
VDSS
ID = 1 mA, VGS = 0
IDR = 50 A, VGS = 0
Diode forward voltage
VDSF
Gate threshold voltage
Vth
VDS = 25 V, ID = 10 mA
Drain-source cutoff current
IDSS
VDS = 160 V, VGS = 0
IGSS
VGS =
Gate-source cutoff currentt
Drain-source on resistance
Min
Forward transfer admittance
Yfs
Ciss
Short-circuit output capacitance
Coss
Typ
2
VDS = 25 V, VGS = 0, f = 1 MHz
29
15
Unit
V
30 V, VDS = 0
VDS = 25 V, ID = 25 A
Max
200
RDS(on) VGS = 10 V, ID = 25 A
Short-circuit forward transfer capacitance
-1.5
V
4
V
100
ìA
1
ìA
40
mÙ
30
S
4 550
pF
750
pF
Reverse transfer capacitance
Crss
75
pF
Turn-on delay time
td(on)
50
ns
125
ns
390
ns
140
ns
ns
Rise time
Turn-off delay time
tr
td(off)
VDD = 100 V, ID = 25 A,RL = 4 Ù, VGS =
10 V
Fall time
tf
Reverse recovery time
trr
L = 230 ìH, VDD = 100 V
210
Reverse recovery charge
Qrr
IDR = 25 A, di /dt = 100 A/ ìs
820
nC
Total gate charge
Qg
85
nC
Gate-source charge
Qgs
30
nC
Gate-drain charge
2
Symbol
Qgd
VDD = 100 V, ID = 25 A,VGS = 10 V
12
nC
Channel-case heat resistance
Rth(ch-c)
1.25
/W
Channel-atmosphere heat resistance
Rth(ch-a)
41.6
/W
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