IC IC SMD Type 400V Dual N-Channel MOSFET KQS4901 Features 0.45 A, 400 V. RDS(ON) = 4.2 @ VGS = 10 V Low gate charge (typical 5.8nC) Low Crss (typical 5.0 Pf) Fast switching speed lmproved dv/dt capability Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Symbol VDSS Drain Current Continuous (TA=25 ) ID Drain Current Continuous (TA=70 ) Drain Current Pulsed (Note 1) IDM Gate-Source Voltage VGS Peak Diode Recovery dv/dt ( Note 2) dv/dt Power Dissipation (TA=25 ) PD Thermal Resistance Junction to Ambient Unit 400 V 0.45 A 0.285 A 1.8 25 4.5 2 A V V/ns W 1.3 Power Dissipation (TA=70 ) Operating and Storage Temperature Rating TJ, TSTG R JA -55 to 150 62.5 /W www.kexin.com.cn 1 IC IC SMD Type KQS4901 Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temperature Coefficient Testconditons VGS = 0 V, ID = 250 ID = 250 IDSS Zero Gate Voltage Drain Current Min Typ Max 400 V 0.42 A, Referenced to 25 Unit V/ VDS = 400 V, VGS = 0 V 1 VDS = 320 V,Tc = 125 10 A Gate-Body Leakage, Forward IGSSF VGS = 25 V, VDS = 0 V 100 nA Gate-Body Leakage, Reverse IGSSR VGS = -25 V, VDS = 0 V -100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 4.0 V Static Drain-Source On-Resistance RDS(on) VGS = 10 V, ID =0.225 A Forward Transconductance gFS A VDS = 35 V, ID = 0.225A (Note 3) 2.0 3.2 4.2 0.283 m S 160 210 pF 30 40 pF 5 6.5 pF td(on) 5 20 ns tr 20 50 ns 20 50 ns Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(off) Turn-Off Fall Time VDS = 25 V, VGS = 0 V,f = 1.0 MHz VDD = 200V, ID =0.45 A, RG = 25 (Note 3,4) tf 35 80 ns Total Gate Charge Vgs=5V Qg 5.8 7.5 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 320 V, ID = 0.45 A,VGS=10V (Note 3,4) 0.53 nC 3.22 nC Maximum Continuous Drain-Source Diode Forward Current IS 0.45 A Maximum Pulsed Drain-Source Diode Forward Current ISM 1.8 A Drain-Source Diode Forward Voltage VSD 1.5 V VGS = 0 V, IS = 0.45 A Diode Reverse Recovery Time trr VGS = 0 V, IS = 0.45 A (Not 3) Diode Reverse Recovery Charge Qrr diF/dt = 100 A/ Note: 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2 ISD 0.45A,di/dt 200A/ S,VDD BVDSS,starting TJ=25 3 Pulse Test :Pulse width 300 s,Duty cycle 2% 4 Essentially indepentdent of operating temperature 2 A www.kexin.com.cn s 86 nS 0.15 nC