IC IC SMD Type 100V Dual N-Channel PowerTrench MOSFET KDS3912 Features 3 A, 100 V. RDS(ON) = 125m @ VGS = 10 V RDS(ON) = 135m @ VGS = 6 V Low gate charge (14 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage VDSS 100 V Gate to Source Voltage VGS Drain Current Continuous (Note 1a) ID Drain Current Pulsed Power Dissipation for Dual Operation PD Power Dissipation for Single Operation (Note 1a) Power Dissipation for Single Operation (Note 1b) V A 20 A 1.6 W 1 PD 0.9 TJ, TSTG -55 to 175 Power Dissipation for Single Operation (Note 1c) Operating and Storage Temperature 20 3 W 0.9 Thermal Resistance Junction to Case (Note 1) R JC 40 /W Thermal Resistance Junction to Ambient (Note 1a) R JA 78 /W www.kexin.com.cn 1 IC IC SMD Type KDS3912 Electrical Characteristics Ta = 25 Parameter Symbol Single Pulse Drain-Source Avalanche Energy W DSS Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage IAR BVDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Testconditons ( Not 2) A Gate-Body Leakage, Forward IGSSF Gate-Body Leakage, Reverse IGSSR Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 Forward Transconductance A V mV/ A VGS = 20 V, VDS = 0 V 100 nA VGS = -20 V, VDS = 0 V -100 nA 4 V A 2 2.5 -6 A, Referenced to 25 mV/ VGS = 10 V, ID = 3 A 92 125 VGS = 6 V, ID = 2.8 A 98 135 175 250 VGS = 10 V, VDS = 10V VDS = 10 V, ID = 3A 10 11 S 632 pF 40 pF pF Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 20 VDS = 50 V, VGS = 0 V,f = 1.0 MHz m A Input Capacitance Turn-On Delay Time td(on) 8.5 17 ns Turn-On Rise Time tr 2 4 ns Turn-Off Delay Time td(off) 23 37 ns VDD = 50 V, ID = 1 A,VGS = 10 V, RGEN = 6 Turn-Off Fall Time tf 4.5 9 ns Total Gate Charge Qg 14 20 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage 2 gFS mJ 10 ID = 250 ID(on) 90 108 VGS = 10 V, ID =3 A,TJ = 125 On-State Drain Current Unit 100 A, Referenced to 25 VDS = 80 V, VGS = 0 V RDS(on) Max 3.0 VGS = 0 V, ID = 250 IDSS Static Drain-Source On-Resistance Typ Single Pulse,VDD=50V,ID=3A(Not 2) ID = 250 Gate Threshold Voltage Temperature Coefficient Min 2.4 nC 3.8 nC IS VSD Diode Reverse Recovery Time trr Diode Reverse Recovery Charge Qrr www.kexin.com.cn VDS = 50 V, ID = 3 A,VGS = 10 V (Note 2) VGS = 0 V, IS = 1.3 A (Not 2) 0.76 1.3 A 1.2 V IF = 3A 30 nS diF/dt = 100 A/ 106 nC s (Not 2)