KEXIN KDS4953

IC
IC
SMD Type
Dual 30V P-Channel PowerTrench MOSFET
KDS4953
Features
-5 A, -30 V. RDS(ON) = 55m
@ VGS = -10V
RDS(ON) = 95m
@ VGS =-4.5V
Low gate charge(6nC typical)
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
Fast switching speed
1: Source 1
3: Source 2
2: Gate 1
4: Gate 2
7,8: Drain 1
5,6: Drain 2
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Drain to Source Voltage
Parameter
VDSS
-30
V
Gate to Source Voltage
VGS
20
V
Drain Current Continuous (Note 1a)
ID
Drain Current Pulsed
Power Dissipation for Single Operation (Note 1a)
Power Dissipation for Single Operation (Note 1b)
A
A
2
PD
Power Dissipation for Single Operation (Note 1c)
Operating and Storage Temperature
-5
-20
1.6
W
1
TJ, TSTG
-55 to 175
Thermal Resistance Junction to Ambient (Note 1a)
R
JA
78
/W
Thermal Resistance Junction to Case (Note 1)
R
JC
40
/W
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1
IC
IC
SMD Type
KDS4953
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Symbol
BVDSS
Breakdown Voltage Temperature Coefficient
VGS = 0 V, ID = -250
ID = -250
A
Min
Typ
Max
-30
V
-23
A, Referenced to 25
Unit
mV/
Zero Gate Voltage Drain Current
IDSS
VDS = -24 V, VGS = 0 V
-1
Gate-Body Leakage, Forward
IGSSF
VGS = -20V, VDS = 0 V
100
nA
Gate-Body Leakage, Reverse
IGSSR
VGS = 20 V, VDS = 0 V
-100
nA
Gate Threshold Voltage(Not 2)
VGS(th)
VDS = VGS, ID = -250
-3
V
Gate Threshold Voltage Temperature
Coefficient(Not 2)
Static Drain-Source On-Resistance(Not 2)
On–State Drain Current
ID = -250
RDS(on)
ID(on)
Forward Transconductance
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
A
-1
-1.7
4.5
A, Referenced to 25
mV/
VGS = -10 V, ID =-5 A
46
55
VGS = -4.5 V, ID = -3.3 A
70
95
VGS = -10 V, ID =-5 A,TJ = 125
63
85
VGS = -10 V, VDS = -5 V
VDS = -5 V, ID = -5A
VDS = -15 V, VGS = 0 V,f = 1.0 MHz
A
-20
m
A
10
S
528
pF
132
pF
Reverse Transfer Capacitance
Crss
70
Turn-On Delay Time
td(on)
7
14
ns
Turn-On Rise Time
tr
13
24
ns
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Drain–Source Diode Forward Voltage
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VDD = -15 V, ID = -1 A,VGS = -10 V, RGEN
= 6 (Note 2)
tf
Total Gate Charge
Maximum Continuous Drain–Source Diode
Forward Current
2
Testconditons
VDS = -15 V, ID =-5 A,VGS=-5V(Note 2)
14
25
ns
9
17
ns
6
9
VGS=0V,IS=-1.3A (Note 2)
nC
2.2
nC
2
nC
IS
VSD
pF
-0.8
-1.3
A
-1.2
V