KEXIN KTA1504S-Y

Transistors
SMD Type
Epitaxial Planar PNP Transistor
KTA1504S-Y
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
■ Features
1
0.55
● Collector Current: IC=-150mA
+0.1
1.3-0.1
+0.1
2.4-0.1
● Collector Power Dissipation: PC=150mW
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Symbol
Rating
Unit
Collector-Emitter Voltage
Parameter
VCEO
-50
V
Collector-Base Voltage
VCBO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-150
mA
Collector Power Dissipation
PC
150
mW
Junction Temperature
Tj
150
℃
Tstg
-55 to 150
℃
Storage Temperature Range
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC=-100μA,IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO IC=-1mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA,IC=0
-5
V
Collector Cut-off Current
ICBO
VCB=-50V, IE=0
Emitter Cut-off Current
IEBO
VEB=-5V, IC=0
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
hFE
VCE=-6V, IC=-2mA
120
VCE(sat) IC=-100mA, IB=-10mA
fT
VCE=-10V, IC=-1mA
-0.1
μA
-0.1
μA
240
-0.1
-0.3
80
V
MHz
Collector Output Capacitance
Cob
VCB=-10V, IE=0, f=1MHz
4.0
7.0
pF
Noise Figure
NF
VCE=-6V, IC=-0.1mA,f=1kHz, Rg=10KΩ
1.0
10
dB
www.kexin.com.cn
1