KEXIN 2SC2716

Transistors
IC
SMD Type
Silicon NPN Epitaxial
2SC2716
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
0.4
3
1
0.55
Low noise figure: NF = 3.5dB (max) (f = 1 MHz).
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
35
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
4
V
IC
100
mA
Collector current
Emitter current
IE
-100
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
Tstg
-55 to +125
Storage temperature range
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cut-off current
ICBO
VCB = 20 V, IE = 0
0.1
ìA
Emitter cut-off current
IEBO
VEB = 2 V, IC = 0
1.0
ìA
DC current gain
hFE
VCE = 12 V, IC = 2 mA
40
240
Collector-emitter saturation voltage
VCE (sat) IC = 10 mA, IB = 1 mA
0.4
V
Base-emitter saturation voltage
VBE (sat) IC = 10 mA, IB = 1 mA
1.0
V
Transition frequency
fT
Collector output capacitance
Cob
Collector-base time constant
Power gain
VCE = 10V, IC = 2 mA
120
MHz
2.2
3.0
pF
Cc.rbb' VCE = 10V, IE = -1 mA , f = 30 MHz
30
50
ps
VCC = 10V, IE = -1 mA , f = 1 MHz,
Rg=50Ù
2.0
3.5
dB
Gpe
VCB = 10V, IE = 0 , f = 1 MHz
80
hFE Classification
Marking
FR
FO
FY
hFE
40 80
70 140
120 240
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