KEXIN KVN4525E6

Transistors
IC
SMD Type
250V N-Channel Enhancement Mode MOSFET
KVN4525E6
Unit: mm
Features
High voltage
Low on-resistance
Fast switching speed
Low gate drive
Low threshold
1 pin mark
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Drain-Source Voltage
Parameter
VDSS
250
V
Gate Source Voltage
VGS
40
V
Continuous Drain Current (VGS=10V; TA=25 )*1
ID
230
mA
(VGS=10V; TA=70 )*1
ID
183
mA
Pulsed Drain Current *3
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at TA=25
A
IDM
*1
IS
1.1
A
ISM
1.44
A
1.1
W
8.8
mW/
PD
Linear Derating Factor
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
Junction to Ambient*1
R
JA
113
/W
Junction to Ambient*2
R
JA
65
/W
*1 For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of
single sided 1oz copper, in still air conditions
*2 For a device surface mounted on FR4 PCB measured at t
5 secs.
*3 Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
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1
Transistors
IC
SMD Type
KVN4525E6
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Drain-Source Breakdown Voltage
V(BR)DSS
Zero Gate Voltage Drain Current
IDSS
VDS=250V, VGS=0V
Gate-Body Leakage
IGSS
VGS= 40V, VDS=0V
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance *1
VGS(th)
RDS(on)
ID=1mA, VGS=0V
ID=1mA, VDS= VGS
Min
Typ
250
285
35
1
0.8
500
100
1.4
1.8
5.6
8.5
VGS=4.5V, ID=360mA
5.9
9.0
6.4
9.5
VDS=10V,ID=0.3A
0.3
Unit
V
VGS=10V, ID=500mA
VGS=2.4V, ID=20mA
nA
nA
V
0.475
S
72
pF
11
pF
3.6
pF
Forward Transconductance *3
gfs
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
td(on)
1.25
ns
Rise Time
1.70
ns
ns
tf
3.5
ns
Qg
2.6
3.65
0.2
0.28
nC
0.5
0.7
nC
0.97
V
td(off)
Fall Time
Total Gate Charge
VDS=25 V, VGS=0V,f=1MHz
11.40
tr
Turn-Off Delay Time
Gate-Source Charge
Qgs
Gate Drain Charge
Qgd
Diode Forward Voltage*!
VSD
VDD =30V, ID=360mA,RG=50 ,
Vqs=10V *2
VDS=25V,VGS=10V,ID=360mA*2
Tj=25 , IS=360mA,VGS=0V
nC
Reverse Recovery Time *3
trr
Tj=25 , IF=360mA,
186
260
ns
Reverse Recovery Charge *3
Qrr
di/dt= 100A/
34
48
nC
*! Measured under pulsed conditions. Width=300 s. Duty cycle
s
2% .
*2 Switching characteristics are independent of operating junction temperature.
*3 For design aid only, not subject to production testing.
Marking
Marking
2
Max
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N52