MOSFET
IC
SMD Type
HEXFET Power MOSFET
KRF7205(IRF7205)
Features
Adavanced Process Technology
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Dynamic dv/dt Rating
Fast Switching
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Continuous Drain Current, VGS @ 10V @ TA = 25
Parameter
ID
-4.6
Continuous Drain Current, VGS @ 10V @ TA = 70
ID
-3.7
IDM
-15
PD
2.5
W
0.02
V
Pulsed Drain Current *1
Power Dissipation
@TC = 25
Linear Derating Factor
Unit
A
Gate-to-Source Voltage
VGS
Peak Diode Recovery dv/dt *2
dv/dt
-3
V/ns
Maximum Junction-to-Ambient *3
R
50
/W
Junction and Storage Temperature Range
JA
TJ, TSTG
20
V
-55 to + 150
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD
-4.6A, di/dt
90A/
s, VDD
*3 Surface mounted on FR-4 board, t
V(BR)DSS,TJ
150
10sec.
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1
IC
MOSFET
SMD Type
KRF7205(IRF7205)
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
VDSS
RDS(on)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
VGS(th)
Forward Transconductance
gfs
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
Testconditons
VGS = 0V, ID = -250A
Min
Typ
Max
-30
V
VGS = -10V, ID = -4.6A*1
0.070
VGS = -4.5V, ID = -2.0A*1
0.130
VDS = VGS, ID = -250
A
VDS = -15V, ID = -4.6A*1
-1.0
-3.0
6.6
VDS = -24V, VGS = 0V
-1.0
VDS = -16V, VGS = 0V, TJ = 70
-5.0
VGS = -20V
-100
VGS = 20V
100
Qg
ID = -4.6A
27
Gate-to-Source Charge
Qgs
VDS = -15V
5.2
Gate-to-Drain ("Miller") Charge
Qgd
VGS = -10V,*1
7.5
Turn-On Delay Time
td(on)
VDD = -15V
14
30
tr
ID = -1.0A
21
60
td(off)
RG = 6.0
97
150
Fall Time
tf
RD = 10
71
100
Internal Source Inductance
LS
2.5
Internal Drain Inductance
LD
4.0
Turn-Off Delay Time
*1
V
S
Total Gate Charge
Rise Time
Unit
A
nA
40
nC
ns
nH
Input Capacitance
Ciss
VGS = 0V
870
Output Capacitance
Coss
VDS = -10V
720
Reverse Transfer Capacitance
Crss
pF
f = 1.0MHz
220
Reverse Recovery Time
trr
TJ = 25
70
100
ns
Reverse RecoveryCharge
Qrr
di/dt = 100A/
100
180
nC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Continuous Source Current Body Diode)
IS
-2.5
ISM
-15
, IF =-4.6A
s*1
A
Pulsed Source Current
Body Diode) *2
Diode Forward Voltage
*1 Pulse width
300
VSD
s; duty cycle
2%.
*2 Repetitive rating; pulse width limited bymax
2
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TJ = 25
, IS = -1.25A, VGS = 0V*1
-1.2
V