Diodes SMD Type Silicon Epitaxial Planar Diode MA2ZV01 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features Good linearity and large capacitance-ratio in CD-VR relation +0.1 2.6-0.1 1.0max Small series resistance rD 0.375 0.475 S-mini type package, allowing downsizing of equipment and +0.05 0.1-0.02 automatic insertion through the taping package A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it V R e v e rs e v o lta g e (D C ) VR 6 J u n c tio n te m p e ra tu re Tj 150 S to ra g e te m p e ra tu re T s tg -5 5 to + 1 5 0 Electrical Characteristics Ta = 25 Parameter Symbol Reverse current (DC) Diode capacitance Capacitance ratio Conditions Typ Max Unit 10 nA IR VR = 6 V C D(1V) f = 1 MHz;V R = 1 V 15 17 C D(3V) f = 1 MHz;V R = 3 V 5 7 C D(1V)/C D(3V) Series resistance * Min rs pF 2.2 V R = 9 pF, f = 470 MHz 1.9 1 Note : 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER Marking Marking 7X www.kexin.com.cn 1