Variable Capacitance Diodes MA2SV05 Silicon epitaxial planar type Unit : mm For VCO 0.15 min. + 0.05 • Good linearity and large capacitance-ratio in CD VR relation • Small series resistance rD • SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.8 ± 0.1 ■ Features 0.27 − 0.02 + 0.05 0.27 − 0.02 0.15 min. 1.3 ± 0.1 1.7 ± 0.1 Rating Unit Reverse voltage (DC) VR 10 V Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C + 0.05 0 to 0.1 Symbol 0.7 ± 0.1 Parameter 0.13 − 0.02 ■ Absolute Maximum Ratings Ta = 25°C 1 : Anode 2 : Cathode SS-Mini Type Package (2-pin) Marking Symbol: 3A ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Symbol IR Conditions VR = 5 V Diode capacitance CD(1V) VR = 1 V, f = 1 MHz CD(4V) VR = 4 V, f = 1 MHz Capacitance ratio CD(1V)/CD(4V) Series resistance* rD Min Typ Max Unit 10 nA 18.5 20.5 pF 3.6 4.1 pF 4.7 VR = 4 V, f = 470 MHz 0.65 Ω Note) 1．Rated input/output frequency: 470 MHz 2．* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 1