KEXIN XP151A13

MOSFET
SMD Type
N-Channel Power MOSFET
XP151A13
SOT-23
■ Features
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
● Low on-state resistance :
0.4
3
RDS(on) = 0.25Ω Max ( VGS = 1.5V )
1
● Ultra high-speed switching
0.55
RDS(on) = 0.14ΩMax ( VGS = 2.5V )
+0.1
1.3-0.1
+0.1
2.4-0.1
RDS(on) = 0.1ΩMax ( VGS = 4.5V )
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.05
0.1-0.01
+0.1
0.97-0.1
● Gate Protect Diode Built-in
0-0.1
+0.1
0.38-0.1
1.Base
1.
Gate
2.Emitter
2.
Source
3.
Drain
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±8
V
ID
1
A
IDP
4
A
Drain Current-Continuous
-Pulse
Drain Current
Maximum Power Dissipation
*
Thermal Resistance,Junction-to-Ambient
Operating Junction and Storage Temperature Range
PD
0.5
W
RθJA
250
℃/W
TJ,TSTG
- 55 to 150
℃
* When implemented on a ceramic PCB
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Zero Gate Voltage Drain Current
IDSS
VGS = 20V , VDS = 0V
10
μA
Gate-Body Leakage
IGSS
VDS = ±8V , VGS = 0V
±10
μA
1.2
V
Gate Source cutoff Voltage
Drain-Source On-State Resistance
Forward Transfer Adittance
Body Drain Diode Forward Voltage
Vgs(off)
RDS(on)
|Yfs|
VF
ID=1mA,VDS=10V
0.5
VGS = 4.5V , ID =0.5A
0.075
0.1
VGS = 2.5V , ID = 0.5A
0.1
0.14
0.25
VGS = 1.5V , ID = 0.1A
0.17
ID=0.5A,VDS=10V
4.2
IF=1A,,VGS=0V
0.8
VDS = 10V , VGS = 0V,f = 1.0MHz
120
Ω
S
1.1
V
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Turn-On Delay Time
td(on)
10
ns
tr
15
ns
td(off)
75
ns
tf
65
ns
Rise Time
Turn-Off Delay Time
Fall Time
220
pF
45
VGS= 5V , ID = 0.5A , VDD=10V
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MOSFET
SMD Type
XP151A13
Drain Current vs. Drain/Source Voltage
4
3.5
3V
3.5
3
2.5V
3
2V
2.5
Vds=10V, Pulse Test
4
3.5V, 4V, 5V
Drain Current:Id (A)
Drain Current :Id (A)
Drain Current vs. Gate/Source Voltage
Ta=25℃, Pulse Test
1.5V
2
1.5
1
2.5
2
1.5
25℃
Ta=125℃
1
0.5
-55℃
0.5
Vgs=1V
0
0
0
0.5
1
1.5
2
2.5
3
0
Drain/Source Voltage:Vds (V)
Drain/Source On-State Resistance
:Rds(on) (Ω)
0.2
Id=1A
0.5A
0.1
0.05
0
2.5
Vgs=1.5V
2.5V
0.1
4.5V
0.01
0
1
2
3
4
0
5
1
Gate/Source Voltage:Vgs (V)
Pulse Test
0.25
0.2
Id=0.5A
Vgs=1.5V
0.1A
0.15
0.5A, 1A
2.5V
0.1
0.5A, 1A
0.05
0
-50
3
4
4.5V
Gate/Source Cut Off Voltage Variance vs. Ambient Temp.
Vds=10V, Id=1mA
0.4
Gate/Source Cut Off Voltage Variance
:Vgs(off) Variance (V)
0.3
2
Drain Current:Id (A)
Drain/Source On-State Resistance vs. Ambient Temp.
Drain/Source On-State Resistance
:Rds(on) (Ω)
2
Ta=25℃, Pulse Test
1
0.15
0.3
0.2
0.1
0
-0.1
-0.2
-0.3
-0.4
0
50
100
Ambient Temp. :Topr (℃)
2
1.5
Drain/Source On-State Resistance vs. Drain Current
Ta=25℃, Pulse Test
0.25
Drain/Source On-State Resistance
:Rds(on) (Ω)
1
Gate/Source Voltage:Vgs (V)
Drain/Source On-State Resistance vs. Gate/Source Voltage
0.3
0.5
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150
-50
0
50
100
Ambient Temp. :Topr (℃)
150
MOSFET
SMD Type
XP151A13
Capacitance vs. Drain/Source Voltage
Vgs=0V, f=1MHz, Ta=25℃
1000
Ciss
Coss
100
Crss
Vgs=5V, Vdd≒10V, PW=10μs, duty≦1%, Ta=25℃
1000
Switching Time:t (ns)
10000
Capacitance:C (pF)
Switching Time vs. Drain Current
10
100
td(off)
tf
tr
10
td(on)
1
0
5
10
15
20
0
0.5
Drain/Source Voltage:Vds (V)
2
Reverse Drain Current vs. Source/Drain Voltage
Vds=10V, Id=1A, Ta=25℃
4
3
2
1
Reverse Drain Current:Idr (A)
Gate/Source Voltage:Vgs (V)
1.5
Drain Current:Id (A)
Gate/Source Voltage vs. Gate Charge
5
1
Ta=25℃, Pulse Test
4
3.5
3
4.5V
2.5V
1.5V
2.5
2
Vgs=0V, -4.5V
1.5
1
0.5
0
0
0
2
4
6
8
0
Gate Charge:Qg (nc)
0.2
0.4
0.6
0.8
1
Source/Drain Voltage:Vsd (V)
Standardized Transition Thermal Resistance:γs(t)
Standardized Transition Thermal Resistance vs. Pulse Width
Rth(ch-a)=250℃/W, (Implemented on a ceramic PCB)
1
Single Pulse
0.1
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width:PW (s)
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