LITEON HSDL-4261

HSDL - 4261
High-Power T-1¾ (5mm) AlGaAs Infrared (870nm) Lamp
Data Sheet
Description
Features
The HSDL-4261 Infrared emitter was designed for applications that require high power, low forward voltage
and high speed. It utilizes Aluminum Galium Arsenide
(AlGaAs) LED technology and is optimized for speed and
efficiency at emission wavelengths of 870nm. The material
used produces high radiant efficiency over a wide range
of currents. The emitter is packaged in clear T-1¾ (5mm)
package.
• Very High Power AlGaAs LED Technology
• 870nm Wavelength
• T-1¾ Package
• Low Cost
• Low Forward Voltage: 1.4V at 20mA
• High Speed: 15ns Rise Times
Applications
5.0±0.
• Industrial IR Equipments
• IR Portable Instruments
8.7±0.
1.14±0.
• Consumer Electronics (Optical mouse etc)
• High Speed IR Communications (IR LANs, IR Modems, IR Dongles etc)
• IR Audio
5.8±0.
1.6min.
• IR Telephones
0.7max.
.54
Part Number
HSDL-4261
1.0min.
CATHODE
FLAT
0.50±0.1
Lead Form
Shipping Option
Straight
Bulk
Absolute Maximum Ratings at 25°C
Parameter
Symbol
Min.
Max
Unit
Reference
DC Forward Current
IFDC
-
100
mA
[1], Fig. 2
Power Dissipation
PDISS
-
190
mW
Reverse Voltage
VR
5
-
V
Operating Temperature
TO
-40
70
°C
Storage Temperature
TS
-40
100
°C
LED Junction Temperature
TJ
-
110
°C
-
260 for 5 sec
°C
Lead Soldering Temperature
Notes:
1. Derate as shown in Figure 6.
Electrical Characteristics at 25°C
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Reference
Forward Voltage
VF
-
1.4
1.7
1.5
1.9
V
IFDC=20mA
IFDC=100mA
Fig. 2
Fig. 3
Forward VoltageTemperature
Coefficient
DV/DT
-
-1.5
-1.3
-
mV/°C
IFDC=20mA
IFDC=100mA
Fig. 4
Series Resistance
RS
-
4.1
-
Ohms
IFDC=100mA
Diode Capacitance
CO
-
80
-
pF
0V, 1MHz
Reverse Voltage
VR
3
14
-
V
IR=100uA
Thermal Resistance, Junction to
Ambient
Rqja
-
280
-
°C/W
Optical Characteristics at 25°C
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Reference
Radiant Optical Power
PO
-
9
45
-
mW
IFDC=20mA
IFDC=100mA
Radiant On-Axis Intensity
IE
-
36
180
-
mW/Sr
IFDC=20mA
IFDC=100mA
Radiant On-Axis Intensity
Temperature Coefficient
DIE/DT
-
-0.22
-
%/°C
IFDC=100mA
Viewing Angle
2q1/2
-
26
-
deg
IFDC=20mA
Fig. 7
Peak wavelength
lPK
-
870
-
nm
IFDC=20mA
Fig. 1
Peak wavelengthTemperature
Coefficient
Dl/DT
-
0.18
-
nm/°C
IFDC=20mA
Spectral Width
Dl
-
47
52
-
nm
IFDC=20mA
IFDC=100mA
Optical Rise and Fall Time
tr/tf
-
15
-
ns
Bandwidth
fc
-
23
-
MHz
IFPK=500mA
Duty Factor=33%
Pulse Width=125ns
Fig. 5
Fig. 1
1.
100
PeakWavelengthat
IFDC=0mA,TA=5oC
0.8
Forward Current, IFDC (mA)
RelativeRadiantIntensity
1
0.6
0.4
0.
0
750
780
810
840
870
Wavelength(nm)
900
10
1
0.0
90
0.
0.4
0.6
0.8
1.0 1.
Forward Voltage, VF (V)
100
ForwardVoltage,VF(V)
1.8
TA=5˚C
10
1.8
IFDC=100mA
1.6
IFDC=0mA
1.4
1.
1
0.0
0.5
1.0
1.5
.0
.5
.0
1.0
.5
-40
-5
Forward Voltage, VF (V)
Figure 3. Peak Forward Current vs. Forward Voltage
0
5
50
70
AmbientTemperature(oC)
DC Forward Current, IFDC (mA)
4.0
TA=5˚C
.0
.0
1.0
0.0
0
40
60
80
DC Forward Current, IFDC (mA)
Figure 5. Relative Radiant Intensity vs. DC Forward Current
100
RJA=00˚C/W
100
0
85
Figure 4. Forward Voltage vs. Ambient Temperature
5.0
Relative Radiant Intensity
(Normalized at 20mA)
1.6
.0
1000
100
80
RJA=400˚C/W
60
RJA=500˚C/W
40
0
0
0
10
0
0
40
50
Ambient Temperature, TA (˚C)
60
Figure 6. DC Forward Current vs. Ambient Temperature
Derated Based on TJMAX=1100C
1.4
Figure 2. DC Forward Current vs. Forward Voltage
Figure 1. Relative Radiant Intensity vs. Wavelength
Peak Forward Current, IFPK (mA)
TA=5˚C
70
Figure 7. Radiant Intensity vs. Angular Displacement
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Data subject to change. Copyright © 2007 Lite-On Technology Corporation. All rights reserved.