TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) TOSHIBA LED Lamps TLRE1100B(T11), TLSE1100B(T11), TLOE1100B(T11), TLYE1100B(T11), TLGE1100B(T11), TLFGE1100B(T11) TLPGE1100B(T11) Unit: mm Panel Circuit Indicator • Surface-mount devices • 3.2 (L) × 2.8 (W) × 1.9 (H) mm • Flat-top type • InGaAℓP LEDs • High luminous intensity • Low drive current, high-intensity light emission • Colors: red, orange, yellow, green, pure green • Pb-free reflow soldering is possible • Applications: automotive use, message signboards, backlighting etc. • Standard embossed tape packing: T11 (2000/reel) 8-mm tape reel Color and Material Product Name Color TLRE1100B Red TLSE1100B Red TLOE1100B Orange TLYE1100B Yellow TLGE1100B Green TLFGE1100B Green TLPGE1100B Pure Green Material JEDEC ― JEITA ― TOSHIBA 4-3R1 Weight: 0.035 g (typ.) InGaAℓP For part availability and ordering information please call Toll Free: 800.984.5337 Website: www.marktechopto.com | Email: [email protected] 1 2006-05-31 TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) Maximum Ratings (Ta = 25°C) Product Name Forward Current IF (mA) Please see Note 1 Reverse Voltage VR (V) Power Dissipation PD (mW) Operation Temperature Topr (°C) Storage Temperature Tstg (°C) 50 4 120 −40~100 −40~100 TLRE1100B TLSE1100B TLOE1100B TLYE1100B TLGE1100B TLFGE1100B TLPGE1100B Note 1: Forward current derating IF – Ta Allowable forward current IF (mA) 80 60 40 20 0 0 20 40 60 80 100 120 Ambient temperature Ta (°C)) Electrical Characteristics (Ta = 25°C) Min Typ. Max TLRE1100B 1.6 1.9 2.4 TLSE1100B 1.6 1.9 2.4 TLOE1100B 1.6 2.0 2.4 TLYE1100B 1.6 2.0 2.4 TLGE1100B 1.6 2.0 2.4 TLFGE1100B 1.6 2.0 2.4 TLPGE1100B 1.6 2.1 2.4 Unit Reverse Current IR Forward Voltage VF Product Name V IF Max VR 20 10 4 mA µA V 2 2006-05-31 TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) Optical Characteristics–1 (Ta = 25°C) Product Name Luminous Intensity IV Available Iv rank Min Typ. Max IF Please see Note 2 TLRE1100B 40 100 320 20 PA / QA / RA / SA TLSE1100B 63 180 500 20 QA / RA / SA / TA TLOE1100B 63 150 500 20 QA / RA / SA / TA TLYE1100B 63 150 500 20 QA / RA / SA / TA TLGE1100B 40 100 320 20 PA / QA / RA / SA TLFGE1100B 25 45 125 20 NA / PA / QA TLPGE1100B 10 25 50 20 LA / MA / NA mcd mcd mcd mA Unit Note 2: The specification on the above table is used for Iv classification of LEDs in Toshiba facility. Each reel includes the same rank LEDs. Let the delivery ratio of each rank be unquestioned. Rank Luminous Intensity IV Min Max LA 10 20 MA 16 32 NA 25 50 PA 40 80 QA 63 125 RA 100 200 SA 160 320 TA 250 500 Unit mcd mcd Optical Characteristics–2 (Ta = 25°C) Emission Spectrum Peak Emission Wavelength λp Product Name ∆λ Dominant Wavelength λd Min Typ. Max Typ. Min Typ. Max TLRE1100B ⎯ 644 ⎯ 18 624 630 638 TLSE1100B ⎯ 623 ⎯ 15 607 613 621 TLOE1100B ⎯ 612 ⎯ 15 599 605 613 TLYE1100B ⎯ 590 ⎯ 15 581 587 595 TLGE1100B ⎯ 574 ⎯ 13 565 571 576 TLFGE1100B ⎯ 568 ⎯ 11 561 565 569 TLPGE1100B ⎯ 562 ⎯ 11 555 558 564 Unit nm nm nm IF 20 mA The cautions • • This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by the IR light. This product is designed as a general display light source usage, and it has applied the measurement standard that matched with the sensitivity of human's eyes. Therefore, it is not intended for usage of functional application (ex. Light source for sensor, optical communication and etc) except general display light source. 3 2006-05-31 TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) TLRE1100B IF – V F IV – IF (typ.) 50 1000 (mcd) Ta = 25°C 500 300 IV 10 Luminous intensity Forward current IF (mA) Ta = 25°C 30 (typ.) 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 VF 3 5 10 30 Forward current IF 50 100 (mA) Wavelength characteristic (typ.) (typ.) 1.0 IF = 20 mA Ta = 25°C Relative luminous intensity IV Relative luminous intensity 30 (V) IV – Tc 3 50 10 1 2.2 10 5 100 1 0.5 0.3 0.1 −25 0 25 50 Case temperature 75 Tc 0.8 0.6 0.4 0.2 0 580 100 (°C) 600 620 640 Wavelength 660 λ 680 700 (nm) Radiation pattern Ta = 25°C (typ.) 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° 80° 0 0.2 0.4 0.6 0.8 90° 1.0 4 2006-05-31 TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) TLSE1100B IF – V F IV – IF (typ.) 1000 Ta = 25°C (mcd) 100 (mA) 50 Luminous intensity IF Forward current Ta = 25°C 500 300 IV 30 (typ.) 10 5 3 1 1.6 1.7 1.8 1.9 2.1 2.0 Forward voltage VF IV – Tc 30 10 1 2.2 3 5 10 30 Forward current 50 IF 100 (mA) Wavelength characteristic (typ.) (typ.) 1.0 IF = 20 mA Ta = 25°C Relative luminous intensity IV Relative luminous intensity 3 50 (V) 10 5 100 1 0.5 0.3 0.1 −25 25 0 75 50 Case temperature Tc 0.8 0.6 0.4 0.2 0 580 100 (°C) 600 620 640 Wavelength 660 λ 680 700 (nm) Radiation pattern Ta = 25°C (typ.) 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° 80° 0 0.2 0.4 0.6 0.8 90° 1.0 5 2006-05-31 TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) TLOE1100B IF – V F IV – IF (typ.) 100 1000 (mcd) 50 Luminous intensity Forward current (typ.) Ta = 25°C 500 300 IV 30 IF (mA) Ta = 25°C 10 5 3 1 1.7 1.8 1.9 2.0 2.1 Forward voltage VF 2.2 IV – Tc 30 10 1 2.3 3 5 10 30 Forward current IF 50 100 (mA) Wavelength characteristic (typ.) (typ.) 1.0 IF = 20 mA Ta = 25°C Relative luminous intensity IV Relative luminous intensity 3 50 (V) 10 5 100 1 0.5 0.3 1 −25 0 25 50 Case temperature 75 Tc 0.8 0.6 0.4 0.2 0 540 100 (°C) 560 580 600 Wavelength 620 λ 640 660 (nm) Radiation pattern Ta = 25°C (typ.) 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° 80° 0 0.2 0.4 0.6 0.8 90° 1.0 6 2006-05-31 TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) TLYE1100B IF – V F IV – IF (typ.) 100 (mcd) Ta = 25°C IV 30 Luminous intensity Forward current IF (mA) Ta = 25°C 50 10 5 3 1 1.7 1.8 1.9 2.0 2.1 Forward voltage 2.2 VF 100 50 20 1 2.3 3 5 10 30 IF 50 100 (mA) Wavelength characteristic (typ.) (typ.) 1.0 IF = 20 mA Ta = 25°C Relative luminous intensity IV Relative luminous intensity 300 Forward current IV – Tc 3 500 (V) 10 5 (typ.) 1000 1 0.5 0.3 0.1 −25 25 0 75 50 Case temperature Tc 0.8 0.6 0.4 0.2 0 540 100 (°C) 560 580 600 Wavelength 620 λ 640 660 (nm) Radiation pattern Ta = 25°C (typ.) 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° 80° 0 0.2 0.4 0.6 0.8 90° 1.0 7 2006-05-31 TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) TLGE1100B IF – V F IV – IF (typ.) 100 (mcd) Ta = 25°C 50 500 300 IV 30 Luminous intensity IF (mA) Ta = 25°C Forward current (typ.) 1000 10 5 3 1 1.7 1.8 1.9 2.0 2.1 Forward voltage VF 5 10 30 IF 50 100 (mA) Wavelength characteristic (typ.) 1.0 (typ.) IF = 20 mA Ta = 25°C Relative luminous intensity IV Relative luminous intensity 3 Forward current IV – Tc 3 30 (V) 10 5 50 10 1 2.3 2.2 100 1 0.5 0.3 0.1 −25 0 25 50 Case temperature 75 Tc 0.8 0.6 0.4 0.2 0 540 100 (°C) 560 580 Wavelength 600 λ 620 (nm) Radiation pattern Ta = 25°C (typ.) 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° 80° 0 0.2 0.4 0.6 0.8 90° 1.0 8 2006-05-31 TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) TLFGE1100B IF – V F IV – IF (typ.) 100 (mcd) Ta = 25°C 50 50 30 IV 30 Luminous intensity IF (mA) Ta = 25°C Forward current (typ.) 100 10 5 3 1 1.7 1.8 1.9 2.0 2.1 Forward voltage VF IV – Tc 3 5 10 Forward current 30 IF 50 100 (mA) Wavelength characteristic (typ.) 1.0 (typ.) IF = 20 mA Ta = 25°C Relative luminous intensity IV Relative luminous intensity 3 3 (V) 10 5 5 1 1 2.3 2.2 10 1 0.5 0.3 0.1 −25 0 25 50 Case temperature 75 Tc 0.8 0.6 0.4 0.2 0 540 100 (°C) 560 580 Wavelength 600 λ 620 (nm) Radiation pattern Ta = 25°C (typ.) 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° 80° 0 0.2 0.4 0.6 0.8 90° 1.0 9 2006-05-31 TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) TLPGE1100B IF – V F (typ.) 100 (mcd) 50 30 IV 30 Luminous intensity IF (mA) (typ.) Ta = 25°C Ta = 25°C 50 Forward current IV – IF 100 10 5 3 1 1.7 1.8 1.9 2.1 2.0 Forward voltage VF 2.2 IV – Tc 3 1 1 2.3 3 5 10 Forward current 30 IF 50 100 (mA) Wavelength characteristic (typ.) 1.0 (typ.) IF = 20 mA Ta = 25°C Relative luminous intensity IV Relative luminous intensity 3 5 (V) 10 5 10 1 0.5 0.3 0.1 −25 0 25 50 Case temperature 75 Tc 0.8 0.6 0.4 0.2 0 520 100 (°C) 540 560 Wavelength 580 λ 600 (nm) Radiation pattern Ta = 25°C (typ.) 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° 80° 0 0.2 0.4 0.6 0.8 90° 1.0 10 2006-05-31 TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) Packaging These LED devices are packed in an aluminum envelope with a silica gel and a moisture indicator to avoid moisture absorption. The optical characteristics of the devices may be affected by exposure to moisture in the air before soldering and they should therefore be stored under the following conditions: 1. This moisture proof bag may be stored unopened within 12 months at the following conditions. Temperature: 5°C~30°C Humidity: 90% (max) 2. After opening the moisture proof bag, the devices should be assembled within 168 hours in an environment of 5°C to 30°C/60% RH or below. 3. If upon opening, the moisture indicator card shows humidity 30% or above (Color of indication changes to pink) or the expiration date has passed, the devices should be baked in taping with reel. After baking, use the baked devices within 72 hours, but perform baking only once. Baking conditions: 60±5°C, for 12 to 24 hours. Expiration date: 12 months from sealing date, which is imprinted on the same side as this label affixed. 4. Repeated baking can cause the peeling strength of the taping to change, then leads to trouble in mounting. Furthermore, prevent the devices from being destructed against static electricity for baking of it. 5. If the packing material of laminate would be broken, the hermeticity would deteriorate. Therefore, do not throw or drop the packed devices. Mounting Method Soldering • Reflow soldering (example) Temperature profile for Pb soldering (example) Temperature profile for Pb-free soldering (example) 5 s max(*) 10 s max (*) (*) (*) 140~160°C max(*) (*) 4°C/s max(*) 4°C/s max 60~120 s max(*) Time • • • • • 260°C max Package surface temperature (°C) Package surface temperature (°C) 240°C max 4°C/s max(*) max(*) 150~180°C 230°C 4°C/s max(*) max(*) 60~120 s Time (s) 30~50s max(*) (s) The products are evaluated using above reflow soldering conditions. No additional test is performed exceed the condition (i.e. the condition more than (*)MAX values) as a evaluation. Please perform reflow soldering under the above conditions. Please perform the first reflow soldering with reference to the above temperature profile and within 168 h of opening the package. Second reflow soldering In case of second reflow soldering should be performed within 168 h of the first reflow under the above conditions. Storage conditions before the second reflow soldering: 30°C, 60% RH (max) Make any necessary soldering corrections manually. (only once at each soldering point) Soldering iron : 25 W Temperature : 300°C or less Time : within 3 s If the products need to be performed by other soldering method (ex. wave soldering), please contact Toshiba sales representative. Recommended soldering pattern 1.65 Unit: mm 1.15 1.65 2.41 11 2006-05-31 TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) Cleaning When cleaning is required after soldering, Toshiba recommends the following cleaning solvents. It is confirmed that these solvents have no effect on semiconductor devices in our dipping test (under the recommended conditions). In selecting the one for your actual usage, please perform sufficient review on washing condition, using condition and etc. ASAHI CLEAN AK-225AES KAO CLEAN TROUGH 750H PINE ALPHA ST-100S TOSHIBA TECHNOCARE (FRW-17, FRW-1, FRV-100) : (made by ASAHI GLASS) : (made by KAO) : (made by ARAKAWA CHEMICAL) : (made by GE TOSHIBA SILICONES) Precautions when Mounting Do not apply force to the plastic part of the LED under high-temperature conditions. To avoid damaging the LED plastic, do not apply friction using a hard material. When installing the PCB in a product, ensure that the device does not come into contact with other cmponents. Tape Specifications 1. Product number format The type of package used for shipment is denoted by a symbol suffix after the product number. The method of classification is as below. (this method, however does not apply to products whose electrical characteristics differ from standard Toshiba specifications) (1) Tape Type: T14 (4-mm pitch) (2) Example TLRE1100B (T11) Tape type Toshiba product No. 2. Tape dimensions Unit: mm Symbol Dimension Tolerance Symbol Dimension Tolerance D 1.5 +0.1/−0 P2 2.0 ±0.05 E 1.75 ±0.1 W 8.0 ±0.3 P0 4.0 ±0.1 P 4.0 ±0.1 t 0.3 ±0.05 A0 2.9 ±0.1 F 3.5 ±0.05 B0 3.7 ±0.1 D1 1.5 ±0.1 K0 2.3 ±0.1 K0 P0 D t P2 E F W B0 P D1 Polarity A0 12 2006-05-31 TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) 3. Reel dimensions Unit: mm 9 ± 0.3 φ60 2 ± 0.5 φ13 φ44 +0 180 −4 11.4 ± 1.0 4. Leader and trailer sections of tape 40 mm or more 40 mm or more (Note 1) (Note 2) Leading part: 190 mm (min) Note1: Empty trailer section Note2: Empty leader section 13 2006-05-31 TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) 5. Packing form (1) Packing quantity Reel 2,000 pcs Carton 10,000 pcs (2) Packing form: Each reel is sealed in an aluminum pack with silica gel. 6. Label format (1) Example: TLRE1100B (T11) P/N: TOSHIBA TYPE TLRE1100B ADDC (T11) Q’TY Lot Number Key code for TSB (RANK SYMBOL) 32C 2,000 pcs 2000 Use under 5-30degC/60%RH within 168h SEAL DATE: DIFFUSED IN ***** ASSEMBLED IN ***** [[G]]/RoHS COMPATIBLE *Y3804xxxxxxxxxxxxxxxxx* (2) Label location • Reel • Carton Tape feel direction Label position Label position • The aluminum package in which the reel is supplied also has the label attached to center of one side. 14 2006-05-31 TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11) RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. 15 2006-05-31