MICROSEMI 2N2218A

580 Pleasant St.
Watertown, MA 02472
PH: (617) 926-0404
FAX: (617) 924-1235
2N2218A
Features
•
•
•
•
•
SWITCHING
TRANSISTOR
JAN, JANTX, JANTXV
Meets MIL 19500 /251
Collector - Base Voltage 75V
Collector - Current 800 mA
Medium Current, Bipolar Transistor
Available in TO-5
SMALL SIGNAL
BIPOLAR
NPN SILICON
TO-39
Maximum Ratings
RATING
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
Total Device Dissipation @ TA = 25 ° C
Derate above 25 ° C
Total Device Dissipation @ TC = 25 ° C
Derate above 25 ° C
Operating Junction&Storage Temperature Range
SYMBOL
VCEO
VCBO
VEBO
IC
PD
T J, Tstg
VALUE
50
75
6
800
0.8
4.6
3.0
17.0
- 55 to +200
UNIT
Vdc
Vdc
Vdc
mAdc
WATTS
mW/°°C
WATTS
mW/°°C
°C
SYMBOL
Rθ
θ JA
Rθ
θ JC
MAX
217
59
UNIT
° C/W
° C/W
PD
Thermal Characteristics
CHARACTERISTIC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
MSCO933A 10-14-98
DSW2N2218A <-> (34724)
2N2218A
Electrical Characteristics (TA = 25°C unless otherwise noted)
OFF CHARACTERISTIC
Collector - Emitter Breakdown Voltage
(1)
( IC = 10 mA dc, IB = 0 )
Collector - Base Breakdown Voltage
( IC = 10 µ Adc,
IE = 0 )
Emitter - Base Breakdown Voltage
( IE = 10 µ Adc,
IC = 0 )
Collector - Emitter Cutoff Current
( VCE = 50 Vdc )
Collector - Base Cutoff Current
( VCB = 60 Vdc, IE = 0 )
( VCB = 60 Vdc, IE = 0, T A = 150 ° C )
Emitter - Base Cutoff Current
( VEB = 4 Vdc )
( VEB = 6 Vdc )
SYMBOL
V(BR)CEO
ON CHARACTERISTIC
DC Current Gain
( IC = 0.1 mA dc, VCE = 10 Vdc )
(1)
( IC = 1 mA dc, VCE = 10 Vdc )
(1)
( IC = 10 mA dc, VCE = 10 Vdc )
(1)
( IC = 150 mA dc, VCE = 10 Vdc )
(1)
( IC = 500 mA dc, VCE = 10 Vdc )
(1)
( IC = 10 mA dc, VCE = 10 Vdc, TJ = - 55°°C ) (1)
Collector - Emitter Saturation Voltage
( IC = 150 mAdc, IB = 15 mAdc )
(1)
( IC = 500 mAdc, IB = 50 mAdc )
(1)
Base - Emitter Saturation Voltage
( IC = 150 mAdc, IB = 15 mAdc )
(1)
( IC = 500 mAdc, IB = 50 mAdc )
(1)
SYMBOL
hFE
MIN
MAX
UNIT
50
Vdc
75
Vdc
6
Vdc
V(BR)CBO
V(BR)EBO
ICES
10
nAdc
10
10
nAdc
µ Adc
10
10
nAdc
µ Adc
MAX
UNIT
ICBO
IEBO
MIN
30
35
40
40
20
35
150
120
VCE(sat)
0.3
1.0
Vdc
Vdc
1.2
2.0
Vdc
Vdc
VBE(sat)
0.6
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤.2%
MSCO933A 10-14-98
DSW2N2218A <-> (34724)
2N2218A
Electrical Characteristics (TA = 25°C unless otherwise noted)
SMALL - SIGNAL CHARACTERISTICS
Output Capacitance
( VCB = 10 Vdc, IE = 0, 100kHz ≤ f ≤ 1 MHz )
Input Capacitance
( VEB = 0.5 Vdc, IC = 0, 100kHz ≤ f ≤ 1 MHz )
SYMBOL
Cobo
SWITCHING CHARACTERISTICS
Turn - On Time
( VCC = 30 Vdc, IC = 150 mAdc,
IB1 =15 mAdc)
( See FIGURE 1 )
Turn - Off Time
( VCC = 30 Vdc, IC = 150 mAdc,
IB1 = - IB2 = 15 mAdc) ( See FIGURE 2 )
SYMBOL
ton
MIN
MAX
UNIT
8.0
pF
25
pF
MAX
UNIT
35
ns
300
ns
MAX
UNIT
Cibo
MIN
toff
Small - Signal AC Characteristics (TA = 25°C)
LOW FREQUENCY
Common - Emitter Forward Current Transfer Ratio
( IC = 1 mA, VCE = 10 V, f = 1kHz )
HIGH FREQUENCY
Common - Emitter Forward Current Transfer Ratio
( IC = 20 mA, VCE = 20 V, f = 100 MHz )
Spice Model
SYMBOL
hfe
35
|hfe|
2.5
(based upon typical device characteristics)
Q2N2218A NPN ( IS = 21.2f
+ NE = 2.05
+ NC = 1.605
+ FC = 0.5
+ ITF = 1.0
XTI = 3.0
IKF = 1.255
IKR = 0.8992
CJE = 29.6p
XTF = 0.0
EG = 1.11
NK = 0.9394
RC = 0.0
MJE = 0.3333
VTF = 10.0 )
MIN
12
*1
VAF = 103.8
XTB = 1.5
CJC = 19.4p
VJE = 0.75
BF = 90.7
BR = 1.031
MJC = 0.3333
TR = 275.0 n
ISE = 3.34p
ISC = 3.299p
VJC = 0.75
TF= 564.5p
*1. Microsemi Corp. claims no responsibility for misapplication of Spice Model information. Spice modeling should be
used as a precursor guide to in-circuit performance. Actual performance is the responsibility of the user/designer.
MSCO933A 10-14-98
DSW2N2218A <-> (34724)
2N2218A
TO-39 CASE OUTLINE
DIE CHARACTERISTICS
Back is Collector
Chip Thickness is:
10 MILS TYP
Metalization is:
Top = Al, Back = Au
DIE OUTLINE
MSCO933A 10-14-98
DSW2N2218A <-> (34724)
2N2218A
FIGURE 1
Saturated Turn-on Time Test Circuit
t
FIGURE 2
MSCO933A 10-14-98
Saturated Turn-off Time Test Circuit
DSW2N2218A <-> (34724)
2N2218A
DC CURRENT GAIN
VCE = 10 V
hFE CURRENT GAIN
125
125
typ @ 25C
100
100
75
75
50
50
typ @ -55C
25
25
0
0
.0001
.001
.01
.1
1
IC COLLECTOR CURRENT (A)
VCE, COLLECTOR-EMITTER (V)
FIGURE 3
COLLECTOR SATURATION vs BASE CURRENT
TJ = 25 C
1.0
1.0
0.8
0.8
IC = 500 mA
0.6
0.6
IC = 150 mA
0.4
0.4
0.2
0.2
0.0
.0001
0.0
.001
.01
IB, BASE CURRENT
.1
1
(A)
FIGURE 4
MSCO933A 10-14-98
DSW2N2218A <-> (34724)
VBE, BASE-EMITTER VOLTAGE (V)
2N2218A
BASE SATURATION vs BASE CURRENT
TJ = 25 C
1.25
1.25
IC = 500 ma
1.00
1.00
IC = 150 ma
0.75
0.75
0.50
.001
0.50
.01
.1
1
IB, BASE CURRENT (A)
FIGURE 5
JUNCTION CAPACITANCE (pF)
JUNCTION CAPACITANCE
TJ = 25 C
100 kHz < f < 1 MHz
30
30
25
25
CIBO
20
20
COBO
15
15
10
10
5
5
0
.01
.1
1
10
0
100
REVERSE JUNCTION VOLTAGE (V)
FIGURE 6
MSCO933A 10-14-98
DSW2N2218A <-> (34724)
2N2218A
SWITCHING TURN - 0N TIME
TJ = 25 C IC/IB = 10
100
ton TIME (ns)
100
max.
min.
10
10
10
1000
100
COLLECTOR CURRENT (mA)
FIGURE 7
SWITCHING TURN - OFF TIME
TJ = 25 C IC/IB = 10
1000
(ns)
1000
toff TIME
max.
min.
100
10
100
500
100
COLLECTOR CURRENT
(mA)
FIGURE 8
MSCO933A 10-14-98
DSW2N2218A <-> (34724)
2N2218A
NORMALIZED GAIN
NORMALIZED GAIN VS FREQUENCY
TJ = 25C IC = 20 mA VCE = 20 V
1
1
.1
.1
.01
1
10
100
.01
1000
FREQUENCY MHz
FIGURE 9
MSCO933A 10-14-98
DSW2N2218A <-> (34724)