TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 DEVICES LEVELS 2N6756 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain – Source Voltage VDS 100 Vdc Gate – Source Voltage Continuous Drain Current VGS ±20 Vdc ID1 14 Adc ID2 9 Adc Ptl 75 (1) W Rds(on) 0.18 (2) Ω Top, Tstg -55 to +150 °C TC = +25°C Continuous Drain Current TC = +100°C Max. Power Dissipation TC = +25°C Drain to Source On State Resistance Operating & Storage Temperature TO-204AA (TO-3) 2N6756 Note: (1) Derated Linearly by 0.6 W/°C for TC > +25°C (2) VGS = 10Vdc, ID = 9A ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc V(BR)DSS 100 Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = 0.25mA VDS ≥ VGS, ID = 0.25mA, Tj = +125°C VDS ≥ VGS, ID = 0.25mA, Tj = -55°C VGS(th)1 VGS(th)2 VGS(th)3 2.0 1.0 Max. Unit OFF CHARACTERTICS Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C Drain Current VGS = 0V, VDS = 80V VGS = 0V, VDS = 100V, Tj = +125°C VGS = 0V, VDS = 80V, Tj = +125°C Static Drain-Source On-State Resistance VGS = 10V, ID = 9A pulsed VGS = 10V, ID = 14A pulsed VGS = 10V, ID = 9A pulsed, Tj = +125°C Diode Forward Voltage VGS = 0V, ID = 14A pulsed T4-LDS-0111 Rev. 2 (100858) Vdc 4.0 Vdc 5.0 IGSS1 IGSS2 ±100 ±200 nAdc IDSS1 IDSS2 IDSS3 25 1.0 0.25 µAdc mAdc mAdc rDS(on)1 rDS(on)2 rDS(on)3 0.18 0.21 0.34 Ω Ω Ω VSD 1.8 Vdc Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge Symbol VGS = 10V, ID = 14A VDS = 80V Min. Qg(on) Qgs Qgd Max. Unit 35 10 15 nC Max. Unit SWITCHING CHARACTERISTICS Parameters / Test Conditions Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time Diode Reverse Recovery Time T4-LDS-0111 Rev. 2 (100858) Symbol ID = 14A, VGS = 10Vdc, Gate drive impedance = 7.5Ω, VDD = 50Vdc di/dt ≤ 100A/µs, VDD ≤ 30V, IF = 14A Min. td(on) tr td(off) tf 35 80 60 45 trr 300 ns ns Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com PACKAGE DIMENSIONS NOTES: 1 2 3 4 5 6 7 Dimensions are in inches. Millimeters are given for general information only. These dimensions should be measured at points .050 inch (1.27 mm) and .055 inch (1.40 mm) below seating plane. When gauge is not used measurement will be made at the seating plane. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. Mounting holes shall be deburred on the seating plane side. Drain is electrically connected to the case. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. Ltr CD CH HR HR1 HT LD LL LL1 MHD MHS PS PS1 s1 Dimensions Inches Millimeters Min Max Min Max .875 22.23 .250 .360 6.35 9.14 .495 .525 12.57 13.34 .131 .188 3.33 4.78 .060 .135 1.52 3.43 .038 .043 0.97 1.09 .312 .500 7.92 12.70 .050 1.27 .151 .161 3.84 4.09 1.177 1.197 29.90 30.40 .420 .440 10.67 11.18 .205 .225 5.21 5.72 .655 .675 16.64 17.15 Notes 3, 5 3, 5 * FIGURE 1: Physical dimensions of transistor (TO-204AA). T4-LDS-0111 Rev. 2 (100858) Page 3 of 3