Hardware Documentation Data Sheet ® HAL 556, HAL 560, HAL 566 Two-Wire Hall-Effect Sensor Family Edition Aug. 11, 2009 DSH000026_004EN HAL55x, HAL56x DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of Micronas. All rights not expressly granted remain reserved by Micronas. Micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. By this publication, Micronas does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively subject to the respective order confirmation. Micronas Trademarks – HAL Micronas Patents Choppered Offset Compensation protected by Micronas patents no. US5260614, US5406202, EP0525235 and EP0548391. Third-Party Trademarks All other brand and product names or company names may be trademarks of their respective companies. Any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. All operating parameters must be validated for each customer application by customers’ technical experts. Any new issue of this document invalidates previous issues. Micronas reserves the right to review this document and to make changes to the document’s content at any time without obligation to notify any person or entity of such revision or changes. For further advice please contact us directly. Do not use our products in life-supporting systems, aviation and aerospace applications! Unless explicitly agreed to otherwise in writing between the parties, Micronas’ products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without the express written consent of Micronas. 2 Aug. 11, 2009; DSH000026_004EN Micronas HAL55x, HAL56x DATA SHEET Contents Page Section Title 4 4 4 5 5 5 5 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range Hall Sensor Package Codes Solderability and Welding 6 2. Functional Description 7 7 12 12 12 12 13 14 15 3. 3.1. 3.2. 3.3. 3.4. 3.4.1. 3.5. 3.6. 3.7. Specification Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics Magnetic Characteristics Overview 18 18 20 22 4. 4.1. 4.2. 4.3. Type Description HAL556 HAL560 HAL566 24 24 24 24 25 25 5. 5.1. 5.2. 5.3. 5.4. 5.5. Application Notes Application Circuit Extended Operating Conditions Start-up Behavior Ambient Temperature EMC and ESD 26 6. Data Sheet History Micronas Aug. 11, 2009; DSH000026_004EN 3 HAL55x, HAL56x DATA SHEET Two-Wire Hall-Effect Sensor Family Sensor Family in CMOS technology Release Note: Revision bars indicate significant changes to the previous edition. – ideal sensor for applications in extreme automotive and industrial environments – EMC corresponding to ISO 7637 1.2. Family Overview 1. Introduction This sensor family consists of different two-wire Hall switches produced in CMOS technology. All sensors change the current consumption depending on the external magnetic field and require only two wires between sensor and evaluation circuit. The sensors of this family differ in the magnetic switching behavior and switching points. The sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and a current source. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the current source is switched on (high current consumption) or off (low current consumption). The types differ according to the mode of switching and the magnetic switching points. Type Switching Behavior Sensitivity see Page 556 unipolar very high 18 560 unipolar inverted low 20 566 unipolar inverted very high 22 Unipolar Switching Sensors: The active offset compensation leads to constant magnetic characteristics in the full supply voltage and temperature range. In addition, the magnetic parameters are robust against mechanical stress effects. The sensors are designed for industrial and automotive applications and operate with supply voltages from 4 V to 24 V in the junction temperature range from −40 °C up to 140 °C. All sensors are available in the SMD-package SOT89B-1 and in the leaded versions TO92UA-1 and TO92UA-2. 1.1. Features – current output for two-wire applications The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low consumption if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. Unipolar Inverted Switching Sensors: The sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high consumption if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. – junction temperature range from −40 °C up to 140 °C. – operates from 4 V to 24 V supply voltage – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz – switching offset compensation at typically 145 kHz – overvoltage and reverse-voltage protection – magnetic characteristics are robust against mechanical stress effects – constant magnetic switching points over a wide supply voltage range – the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the magnetic characteristics 4 Aug. 11, 2009; 000026_004ENDSH Micronas HAL55x, HAL56x DATA SHEET 1.3. Marking Code 1.5. Hall Sensor Package Codes All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. HALXXXPA-T Temperature Range: K or E Package: SF for SOT89B-1 UA for TO92UA Type Temperature Range K E HAL556 556K 556E HAL560 560K 560E HAL566 566K 566E Type: 556, 560, or 566 Example: HAL556UA-E → Type: 556 → Package: TO92UA → Temperature Range: TJ = −40 °C to +100 °C 1.4. Operating Junction Temperature Range The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Hall Sensors: Ordering Codes, Packaging, Handling”. 1.6. Solderability and Welding K: TJ = −40 °C to +140 °C Soldering E: TJ = −40 °C to +100 °C Note: Due to the high power dissipation at high current consumption, there is a difference between the ambient temperature (TA) and junction temperature. Please refer to section 5.4. on page 25 for details. During soldering reflow processing and manual reworking, a component body temperature of 260 °C should not be exceeded. Welding Device terminals should be compatible with laser and resistance welding. Please note that the success of the welding process is subject to different welding parameters which will vary according to the welding technique used. A very close control of the welding parameters is absolutely necessary in order to reach satisfying results. Micronas, therefore, does not give any implied or express warranty as to the ability to weld the component. 1 VDD 3 NC 2 4 GND Fig. 1–1: Pin configuration Micronas Aug. 11, 2009; DSH000026_004EN 5 HAL55x, HAL56x DATA SHEET 2. Functional Description The HAL55x, HAL56x two-wire sensors are monolithic integrated circuits which switch in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperaturedependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. HAL55x, HAL56x VDD 1 Reverse Voltage & Overvoltage Protection Temperature Dependent Bias Hall Plate Hysteresis Control Comparator Current Source Switch Clock If the magnetic field exceeds the threshold levels, the current source switches to the corresponding state. In the low current consumption state, the current source is switched off and the current consumption is caused only by the current through the Hall sensor. In the high current consumption state, the current source is switched on and the current consumption is caused by the current through the Hall sensor and the current source. The built-in hysteresis eliminates oscillation and provides switching behavior of the output signal without bouncing. Magnetic offset caused by mechanical stress is compensated for by using the “switching offset compensation technique”. An internal oscillator provides a twophase clock. In each phase, the current is forced through the Hall plate in a different direction, and the Hall voltage is measured. At the end of the two phases, the Hall voltages are averaged and thereby the offset voltages are eliminated. The average value is compared with the fixed switching points. Subsequently, the current consumption switches to the corresponding state. The amount of time elapsed from crossing the magnetic switching level to switching of the current level can vary between zero and 1/fosc. Shunt protection devices clamp voltage peaks at the VDD-pin together with external series resistors. Reverse current is limited at the VDD-pin by an internal series resistor up to −15 V. No external protection diode is needed for reverse voltages ranging from 0 V to −15 V. 6 GND 2 Fig. 2–1: HAL55x, HAL56x block diagram fosc t B BOFF BON t IDD IDDhigh IDDlow t IDD 1/fosc = 6.9 μs t Fig. 2–2: Timing diagram (example HAL56x) Aug. 11, 2009; DSH000026_004EN Micronas HAL55x, HAL56x DATA SHEET 3. Specification 3.1. Outline Dimensions Fig. 3–1: SOT89B-1: Plastic Small Outline Transistor package, 4 leads, with two sensitive areas Weight approximately 0.039 g Micronas Aug. 11, 2009; DSH000026_004EN 7 HAL55x, HAL56x DATA SHEET Fig. 3–2: TO92UA-1: Plastic Transistor Standard UA package, 3 leads, spread Weight approximately 0.106 g 8 Aug. 11, 2009; DSH000026_004EN Micronas HAL55x, HAL56x DATA SHEET Fig. 3–3: TO92UA-2: Plastic Transistor Standard UA package, 3 leads, not spread Weight approximately 0.106 g Micronas Aug. 11, 2009; DSH000026_004EN 9 HAL55x, HAL56x DATA SHEET Fig. 3–4: TO92UA-1: Dimensions ammopack inline, spread 10 Aug. 11, 2009; DSH000026_004EN Micronas HAL55x, HAL56x DATA SHEET Fig. 3–1: TO92UA-2: Dimensions ammopack inline, not spread Micronas Aug. 11, 2009; DSH000026_004EN 11 HAL55x, HAL56x DATA SHEET 3.2. Dimensions of Sensitive Area 0.25 mm × 0.12 mm 3.3. Positions of Sensitive Areas SOT89B-1 TO92UA-1/-2 y 0.95 mm nominal 1.0 mm nominal A4 0.3 mm nominal 0.3 mm nominal 3.05 mm ±50 μm D1 3.4. Absolute Maximum Ratings Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit. All voltages listed are referenced to ground (GND). Symbol Parameter Pin No. Min. Max. Unit VDD Supply Voltage 1 −151)2) 282) V TJ Junction Temperature Range −40 170 °C 1) 2) −18 V with a 100 Ω series resistor at pin 1 (−16 V with a 30 Ω series resistor) as long as TJmax is not exceeded 3.4.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. 12 Aug. 11, 2009; DSH000026_004EN Micronas HAL55x, HAL56x DATA SHEET 3.5. Recommended Operating Conditions Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this specification is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime. All voltages listed are referenced to ground (GND). Symbol Parameter Pin No. Min. Max. Unit VDD Supply Voltage 1 4 24 V TA Ambient Temperature for Continuous Operations −40 851) °C 1) when using the “K” type and VDD ≤ 16 V Note: Due to the high power dissipation at high current consumption, there is a difference between the ambient temperature (TA) and junction temperature. The power dissipation can be reduced by repeatedly switching the supply voltage on and off (pulse mode). Please refer to section 5.4. on page 25 for details. Micronas Aug. 11, 2009; DSH000026_004EN 13 HAL55x, HAL56x DATA SHEET 3.6. Characteristics at TJ = −40 °C to +140 °C, VDD = 4 V to 24 V, GND = 0 V, at Recommended Operation Conditions if not otherwise specified in the column “Conditions”. Typical Characteristics for TJ = 25 °C and VDD = 12 V. Symbol Parameter Pin No. Min. Typ. Max. Unit IDD Low Current Consumption over Temperature Range 1 2 3.3 5 mA IDD High Current Consumption over Temperature Range 1 12 14.3 17 mA VDDZ Overvoltage Protection at Supply 1 − 28.5 32 V fosc Internal Oscillator Chopper Frequency − − 145 − kHz ten(O) Enable Time of Output after Setting of VDD 1 − 30 − μs 1) tr Output Rise Time 1 − 0.4 1.6 μs VDD = 12 V, Rs = 30 Ω tf Output Fall Time 1 − 0.4 1.6 μs VDD = 12 V, Rs = 30 Ω RthJSB case SOT89B-1 Thermal Resistance Junction to Substrate Backside − − 150 200 K/W Fiberglass Substrate 30 mm x 10 mm x 1.5 mm, for pad size see Fig. 3–1 RthJA case TO92UA-1, TO92UA-2 Thermal Resistance Junction to Soldering Point − − 150 200 K/W 1) B > BON + 2 mT or B < BOFF - 2 mT for HAL55x, Conditions IDD = 25 mA, TJ = 25 °C, t = 20 ms B > BOFF + 2 mT or B < BON - 2 mT for HAL56x 1.80 1.05 1.45 2.90 1.05 0.50 1.50 Fig. 3–1: Recommended pad size SOT89B-1 Dimensions in mm 14 Aug. 11, 2009; DSH000026_004EN Micronas HAL55x, HAL56x DATA SHEET 3.7. Magnetic Characteristics Overview at TJ = −40 °C to +140 °C, VDD = 4.0 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Sensor Parameter Switching Type TJ On point BON Off point BOFF Hysteresis BHYS Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Unit HAL556 −40 °C 3.4 6.3 7.7 2.1 4.2 5.9 0.8 2.1 3 mT unipolar 25 °C 3.4 6 7.4 2 3.8 5.7 0.5 1.8 2.8 mT 100 °C 3.2 5.5 7.2 1.9 3.7 5.7 0.3 1.8 2.8 mT 140 °C 3 5.2 7.4 1.2 3.6 6 0.2 1.6 3 mT HAL560 −40 °C 41 46.5 52 47 53 59 4 6.5 10 mT unipolar 25 °C 41 46.6 52 46 52.5 58.5 3 6 9 mT inverted 100 °C 41 45.7 52 45 41.1 57.5 2 5.4 8 mT 140 °C 39 44.8 51 43.5 49.8 56.5 2 5 8 mT HAL566 −40 °C 2.1 4 5.9 3.4 6 7.7 0.8 2 2.8 mT unipolar 25 °C 2 3.9 5.7 3.4 5.9 7.2 0.5 2 2.7 mT inverted 100 °C 1.85 3.8 5.7 3.25 5.6 7 0.3 1.8 2.6 mT 140 °C 1.3 3.6 7.3 2.6 5.2 7.3 0.2 1.6 3 mT Note: For detailed descriptions of the individual types, see pages 18 and following. Micronas Aug. 11, 2009; DSH000026_004EN 15 HAL55x, HAL56x DATA SHEET HAL 55x, HAL 56x mA 25 mA 20 HAL 55x, HAL 56x 18 20 IDD IDD IDDhigh 15 16 IDDhigh 14 10 12 5 VDD = 4 V 10 IDDlow 0 VDD = 12 V 8 −5 VDD = 24 V TA = −40 °C 6 TA = 25 °C −10 −15 −20 −15 −5 5 TA = 100 °C 4 TA = 140 °C 2 15 0 −50 35 V 25 IDDlow 0 50 100 VDD Fig. 3–4: Typical supply current versus ambient temperature HAL 55x, HAL 56x kHz 200 18 IDD HAL 55x, HAL 56x 180 fosc IDDhigh 16 14 160 140 12 10 TA = −40 °C 120 TA = 25 °C 100 VDD = 4 V 80 VDD = 12 V TA = 100 °C 8 TA = 140 °C 6 VDD = 24 V 60 IDDlow 4 40 2 0 20 0 1 2 3 4 5 6 V 0 −50 VDD Fig. 3–3: Typical supply current versus supply voltage 16 200 °C TA Fig. 3–2: Typical supply current versus supply voltage mA 20 150 0 50 100 150 200 °C TA Fig. 3–5: Typ. internal chopper frequency versus ambient temperature Aug. 11, 2009; DSH000026_004EN Micronas HAL55x, HAL56x DATA SHEET kHz 200 kHz 200 HAL 55x, HAL 56x 180 fosc HAL 55x, HAL 56x 180 fosc 160 160 140 140 120 120 100 100 80 TA = −40 °C 80 TA = −40 °C 60 TA = 25 °C 60 40 TA = 100°C 40 TA = 25 °C TA = 100°C TA = 140°C TA = 140°C 20 0 20 0 5 10 15 20 25 30 V 0 VDD 4 5 6 7 8 V VDD Fig. 3–6: Typ. internal chopper frequency versus supply voltage Micronas 3 Fig. 3–7: Typ. internal chopper frequency versus supply voltage Aug. 11, 2009; DSH000026_004EN 17 HAL55x, HAL56x DATA SHEET 4. Type Description Applications 4.1. HAL556 The HAL556 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position such as: The HAL556 is a very sensitive unipolar switching sensor (see Fig. 4–1). – applications with large airgap or weak magnets, The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. – solid state switches, – contactless solutions to replace micro switches, – position and end point detection, and – rotating speed measurement. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Current consumption IDDhigh In the HAL55x, HAL56x two-wire sensor family, the HAL566 is a sensor with the same magnetic characteristics but with an inverted output characteristic. BHYS IDDlow Magnetic Features: – switching type: unipolar 0 BOFF B BON – very high sensitivity Fig. 4–1: Definition of magnetic switching points for the HAL556 – typical BON: 6 mT at room temperature – typical BOFF: 4 mT at room temperature – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 4 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Min. Typ. Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Max. −40 °C 3.4 6.3 7.7 2.1 4.2 5.9 0.8 2.1 3 25 °C 3.4 6 7.4 2 3.8 5.7 0.5 1.8 2.8 100 °C 3.2 5.5 7.2 1.9 3.7 5.7 0.3 1.8 2.8 4.6 mT 140 °C 3 5.2 7.4 1.2 3.6 6 0.2 1.6 3 4.4 mT 5.2 2.7 4.9 mT 6.5 mT The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 18 Aug. 11, 2009; DSH000026_004EN Micronas HAL55x, HAL56x DATA SHEET mT 8 mT 8 HAL 556 HAL 556 BONmax BON BOFF 7 BON BOFF BON 7 BONtyp 6 6 BOFFmax 5 5 4 4 BOFFtyp BOFF 3 3 TA = −40 °C TA = 25 °C 2 BONmin BOFFmin 2 VDD = 4 V TA = 100 °C TA = 140 °C 1 VDD = 12 V 1 VDD = 24 V 0 0 5 10 15 20 25 30 V 0 −50 Fig. 4–2: Typ. magnetic switching points versus supply voltage BON BOFF HAL 556 7 50 100 150 200 °C TA, TJ VDD mT 8 0 Fig. 4–4: Magnetic switching points versus temperature Note: In the diagram “Magnetic switching points versus temperature”, the curves for B ONmin, B ONmax, BOFF min, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BOFF 6 5 4 BON 3 TA = −40 °C TA = 25 °C 2 TA = 100 °C TA = 140 °C 1 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4–3: Typ. magnetic switching points versus supply voltage Micronas Aug. 11, 2009; DSH000026_004EN 19 HAL55x, HAL56x DATA SHEET 4.2. HAL560 Applications The HAL560 is a low-sensitive unipolar switching sensor with an inverted output (see Fig. 4–5). The HAL560 is designed for applications with one magnetic polarity and strong magnetic amplitudes at the sensor position where an inverted output signal is required such as: The sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. – applications with strong magnets, – solid state switches, – contactless solutions to replace micro switches, For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. – position and end point detection, and – rotating speed measurement. Magnetic Features: Current consumption – switching type: unipolar inverted IDDhigh – low sensitivity BHYS – typical BON: 45.6 mT at room temperature – typical BOFF: 51.7 mT at room temperature IDDlow – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz 0 BON B BOFF Fig. 4–5: Definition of magnetic switching points for the HAL560 Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 4 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Min. Typ. Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Max. −40 °C 41 46.5 52 47 53 59 4 6.5 10 49.8 mT 25 °C 41 46.5 52 46 52.5 58.5 3 6 9 49.5 mT 100 °C 41 45.7 52 45 51.1 57.5 2 5.4 8 48.4 mT 140 °C 39 44.8 51 43.5 49.8 56.5 2 5 8 47.3 mT The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 20 Aug. 11, 2009; DSH000026_004EN Micronas HAL55x, HAL56x DATA SHEET mT 60 HAL 560 mT 60 HAL 560 BOFFmax BON BOFF 55 BON BOFF 55 BOFF 50 50 BOFFtyp BONmax BONtyp BON 45 45 BOFFmin TA = –40 °C 40 40 TA = 25 °C BONmin TA = 100 °C TA = 140 °C 35 VDD = 4 V 35 VDD = 12 V VDD = 24 V 30 0 5 10 15 20 25 30 V 30 –50 Fig. 4–6: Typ. magnetic switching points versus supply voltage HAL 560 BON BOFF 55 50 100 150 200 °C TA, TJ VDD mT 60 0 Fig. 4–8: Magnetic switching points versus temperature Note: In the diagram “Magnetic switching points versus temperature”, the curves for B ONmin, B ONmax, BOFF min, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BOFF 50 45 BON TA = –40 °C 40 TA = 25 °C TA = 100 °C TA = 140 °C 35 30 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4–7: Typ. magnetic switching points versus supply voltage Micronas Aug. 11, 2009; DSH000026_004EN 21 HAL55x, HAL56x DATA SHEET 4.3. HAL566 Applications The HAL566 is a very sensitive unipolar switching sensor with an inverted output (see Fig. 4–9). The HAL566 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position where an inverted output signal is required such as: The sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. – applications with large airgap or weak magnets, – solid state switches, – contactless solutions to replace micro switches, For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. – position and end point detection, and – rotating speed measurement. In the HAL55x, HAL56x two-wire sensor family, the HAL556 is a sensor with the same magnetic characteristics but with a normal output characteristic. Current consumption IDDhigh BHYS Magnetic Features: – switching type: unipolar inverted IDDlow – high sensitivity – typical BON: 4 mT at room temperature 0 BON BOFF B – typical BOFF: 5.9 mT at room temperature Fig. 4–9: Definition of magnetic switching points for the HAL566 – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 4 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 2.1 4 5.9 3.4 6 7.7 0.8 2 2.8 − 5 − mT 2 3.9 5.7 3.4 5.9 7.2 0.5 2 2.7 3 4.9 6.2 mT 100 °C 1.85 3.8 5.7 3.25 5.6 7 0.3 1.8 2.6 − 4.7 − mT 140 °C 1.3 3.6 6 2.6 5.2 7.3 0.2 1.6 3 − 4.4 − mT −40 °C 25 °C The hysteresis is the difference between the switching points BHYS = BON − BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 22 Aug. 11, 2009; DSH000026_004EN Micronas HAL55x, HAL56x DATA SHEET mT 8 mT 8 HAL 566 HAL 566 BOFFmax BON BOFF 7 BON BOFF BOFF 6 7 6 BONmax BOFFtyp 5 5 BONtyp BON 4 4 BOFFmin 3 3 TA = −40 °C BONmin TA = 25 °C 2 2 TA = 100 °C VDD = 4 V 1 TA = 140 °C 1 VDD = 12 V VDD = 24 V 0 0 5 10 15 20 25 30 V 0 −50 Fig. 4–10: Typ. magnetic switching points versus supply voltage BON BOFF 50 100 150 200 °C TA, TJ VDD mT 8 0 HAL 566 7 Fig. 4–12: Magnetic switching points versus temperature Note: In the diagram “Magnetic switching points versus temperature”, the curves for B ONmin, B ONmax, BOFF min, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BOFF 6 5 4 BON 3 TA = −40 °C TA = 25 °C 2 TA = 100 °C TA = 140 °C 1 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4–11: Typ. magnetic switching points versus supply voltage Micronas Aug. 11, 2009; DSH000026_004EN 23 HAL55x, HAL56x DATA SHEET 5. Application Notes 5.2. Extended Operating Conditions 5.1. Application Circuit All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 13). Figure 5–1 shows a simple application with a two-wire sensor. The current consumption can be detected by measuring the voltage over RL. For correct functioning of the sensor, the voltage between pin 1 and 2 (VDD) must be a minimum of 4 V. With the maximum current consumption of 17 mA, the maximum RL can be calculated as: R Lmax Typically, the sensors operate with supply voltages above 3 V. However, below 4 V, the current consumption and the magnetic characteristics may be outside the specification. Note: The functionality of the sensor below 4 V is not tested on a regular base. For special test conditions, please contact Micronas. V SUPmin – 4V = --------------------------------17mA 5.3. Start-up Behavior VSUP Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in the Electrical Characteristics (see page 14). During the initialization time, the current consumption is not defined and can toggle between low and high. VSIG RL 2 or x GND Fig. 5–1: Application circuit 1 HAL55x: For applications with disturbances on the supply line or radiated disturbances, a series resistor RV (ranging from 10 Ω to 30 Ω) and a capacitor both placed close to the sensor are recommended (see Fig. 5–2). In this case, the maximum RL can be calculated as: After ten(O), the current consumption will be high if the applied magnetic field B is above BON. The current consumption will be low if B is below BOFF. V SUPmin – 4V R Lmax = --------------------------------- – RV 17mA In case of sensors with an inverted switching behavior, the current consumption will be low if B > BOFF and high if B < BON. Note: For magnetic fields between BOFF and BON, the current consumption of the HAL sensor will be either low or high after applying VDD. In order to achieve a defined current consumption, the applied magnetic field must be above BON, respectively, below BOFF. 1 VDD VSUP HAL56x: RV VSIG 4.7 nF RL 2 or x GND Fig. 5–2: Application circuit 2 24 Aug. 11, 2009; DSH000026_004EN Micronas HAL55x, HAL56x DATA SHEET 5.4. Ambient Temperature 5.5. EMC and ESD Due to internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see Fig. 5–3). The series resistor and the capacitor should be placed as closely as possible to the HAL sensor. T J = T A + ΔT Applications with this arrangement passed the EMC tests according to the product standard ISO 7637. Under static conditions and continuous operation, the following equation applies: ΔT = I DD × V DD × RTH Please contact Micronas for the detailed investigation reports with the EMC and ESD results. RV1 RV2 100 Ω 30 Ω For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: 1 VDD VEMC T Amax = T Jmax – ΔT 4.7 nF 2 GND For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. Fig. 5–3: Recommended EMC test circuit Due to the range of IDDhigh, self-heating can be critical. The junction temperature can be reduced with pulsed supply voltage. For supply times (ton) ranging from 30 μs to 1 ms, the following equation can be used: t on ΔT = I DD × VDD × Rth × -------------------t off + t on Micronas Aug. 11, 2009; DSH000026_004EN 25 HAL556, HAL560, HAL566 6. Data Sheet History 1. Data sheet: “HAL54x Hall-Effect Sensor Family”, Nov. 27, 2002, 6251-605-1DS. First release of the data sheet. 2. Data sheet: “HAL556, HAL560, HAL566, Two-Wire Hall-Effect Sensor Family, Aug. 3, 2000, 6251-425-2DS. Second release of the data sheet. Major changes: – magnetic characteristics for HAL556 and HAL560 changed. Please refer to pages 12 and 14 for details. – new temperature ranges “K” and “A” added DATA SHEET 6. Data Sheet: “HAL556, HAL560, HAL566 Two-Wire Hall-Effect Sensor Family”, Feb. 12, 2009, DSH000026_004EN. Sixth release of the data sheet. Minor changes: – Section 3.3. “Positions of Sensitive Areas” updated (parameter A4 for SOT89B-1 was added). 7. Data Sheet: “HAL556, HAL560, HAL566 Two-Wire Hall-Effect Sensor Family”, July 30, 2009, DSH000026_004EN. Seventh release of the data sheet. Major changes: – Package outlines updated – HAL 560 added. – temperature range “C” removed – outline dimensions for SOT-89B: reduced tolerances – SMD package SOT-89A removed 3. Data sheet: “HAL556, HAL560, HAL566, Two-Wire Hall-Effect Sensor Family, Jan. 28, 2003, 6251-425-3DS. Third release of the data sheet. Major changes: – temperature range “A” removed – outline dimensions for TO-92UA changed 4. Data sheet: “HAL556, HAL560, HAL566, Two-Wire Hall-Effect Sensor Family, May 14, 2004, 6251-425-4DS (DSH000026_001EN). Fourth release of the data sheet. Major changes: – new package diagrams for SOT89B-1 and TO92UA-1 – package diagram for TO92UA-2 added – ammopack diagrams for TO92UA-1/-2 added 5. Data Sheet: “HAL556, HAL566 Two-Wire HallEffect Sensor Family”, Dec. 19, 2008, DSH000026_002EN. Fifth release of the data sheet. Major changes: – Section 1.6. on page 5 “Solderability and Welding updated – all package diagrams updated – recommended footprint SOT89B-1 added – HAL 560 removed. Micronas GmbH Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: [email protected] ⋅ Internet: www.micronas.com 26 Aug. 11, 2009; DSH000026_004EN Micronas