APT8020B2FLL
APT8020LFLL
800V
POWER MOS 7
R
FREDFET
B2FLL
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with Microsemi's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
T-MAX™
TO-264
LFLL
• Increased Power Dissipation
• Easier To Drive
• Popular T-MAX™ or TO-264 Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
38A 0.220Ω
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT8020B2_LFLL
UNIT
Drain-Source Voltage
800
Volts
ID
Continuous Drain Current @ TC = 25°C
38
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
694
Watts
Linear Derating Factor
5.56
W/°C
VDSS
PD
TJ,TSTG
1
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
1
Amps
152
-55 to 150
°C
300
Amps
38
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 19A)
TYP
MAX
UNIT
Volts
0.220
Ohms
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
µA
5-2006
Characteristic / Test Conditions
050-7078 Rev C
Symbol
APT8020B2_LFLL
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Ciss
Test Conditions
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
f = 1 MHz
Qg
3
Total Gate Charge
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
RESISTIVE SWITCHING
VGS = 15V
VDD = 400V
tf
ID = 38A @ 25°C
Fall Time
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
ns
875
VDD = 533V, VGS = 15V
825
ID = 38A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
6
nC
9
RG = 0.6Ω
Eon
UNIT
pF
190
195
27
130
12
14
39
ID = 38A @ 25°C
Turn-off Delay Time
MAX
5200
1000
VDD = 400V
Rise Time
td(off)
TYP
VGS = 10V
Qgs
tr
MIN
µJ
1450
VDD = 533V VGS = 15V
ID = 38A, RG = 5Ω
985
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
dv/
Characteristic / Test Conditions
MIN
TYP
MAX
38
Continuous Source Current (Body Diode)
Amps
Pulsed Source Current
1
(Body Diode)
152
Diode Forward Voltage
2
(VGS = 0V, IS = -38A)
1.3
Volts
18
V/ns
Peak Diode Recovery
dt
UNIT
dv/
5
dt
t rr
Reverse Recovery Time
(IS = -38A, di/dt = 100A/µs)
Tj = 25°C
320
Tj = 125°C
650
Q rr
Reverse Recovery Charge
(IS = -38A, di/dt = 100A/µs)
Tj = 25°C
1.4
Tj = 125°C
5.9
IRRM
Peak Recovery Current
(IS = -38A, di/dt = 100A/µs)
Tj = 25°C
10.8
Tj = 125°C
18.9
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.18
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.7
0.12
0.5
Note:
0.08
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7078 Rev C
5-2006
0.20
0.3
0.04
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.05
0
10-5
t1
t2
SINGLE PULSE
0.1
10-4
10-3
°C/W
4 Starting Tj = +25°C, L = 4.16mH, RG = 25Ω, Peak IL = 38A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID38A di/dt ≤ 700A/µs VR ≤ 800 TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.16
UNIT
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT8020B2_LFLL
0.0271
0.0656
0.0860
Dissipated Power
(Watts)
0.00899
0.0202
0.293
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
80
60
TJ = +125°C
40
TJ = -55°C
TJ = +25°C
20
0
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
6V
20
5.5V
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
V
30
25
20
15
10
5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
D
D
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
10
20
30
40
50 60 70
80
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
= 19A
GS
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
I
V
NORMALIZED TO
= 10V @ I = 19A
GS
1.30
1.15
35
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
40
5V
40
0.0
-50
6.5V
1.1
1.0
0.9
0.8
5-2006
100
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
7V
60
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
050-7078 Rev C
ID, DRAIN CURRENT (AMPERES)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
120
8V
VGS =15 &10 V
80
0
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
TC ( C)
ZEXT
TJ ( C)
ID, DRAIN CURRENT (AMPERES)
100
Typical Performance Curves
152
10,000
Ciss
100µS
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
C, CAPACITANCE (pF)
50
1
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
OPERATION HERE
LIMITED BY RDS (ON)
16
D
= 38A
12
VDS=160V
8
VDS=400V
VDS=640V
4
0
50
100
150
200
250
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
Crss
100
0
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
180
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
140
V
120
DD
R
G
G
= 5Ω
T = 125°C
J
L = 100µH
tf
= 533V
= 5Ω
T = 125°C
J
100
= 533V
DD
R
tr and tf (ns)
td(on) and td(off) (ns)
TJ =+150°C
80
L = 100µH
80
60
40
tr
60
40
20
td(on)
20
0
10
20
30
40
50
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
R
G
2000
0
10
60
40
50
60
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
6000
= 533V
DD
I
J
E ON includes
diode reverse recovery.
1500
Eoff
Eon
1000
500
20
D
5000
T = 125°C
L = 100µH
0
10
20
V
= 5Ω
SWITCHING ENERGY (µJ)
2500
SWITCHING ENERGY (µJ)
100
td(off)
160
5-2006
200
100
200
050-7078 Rev C
Coss
10mS
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
1,000
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
100
APT8020B2_LFLL
20,000
30
40
50
60
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
30
= 533V
= 38A
T = 125°C
J
L = 100µH
EON includes
4000
Eoff
diode reverse recovery.
3000
Eon
2000
1000
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT8020B2_LFLL
90%
Gate Voltage
10%
Gate Voltage
TJ125°C
TJ125°C
td(off)
td(on)
tr
Drain Voltage
90%
Drain Current
tf
90%
10%
0
5%
5%
Drain Voltage
10%
Drain Current
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF100
ID
V DD
V DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
Drain
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
5-2006
4.50 (.177) Max.
25.48 (1.003)
26.49 (1.043)
050-7078 Rev C
Drain
20.80 (.819)
21.46 (.845)