SAMHOP STS8215

S T S 8215
S amHop Microelectronics C orp.
J an. 10 2008 V er1.0
Dual N-C hannel E nhancement Mode Field E ffect Transistor
F E AT UR E S
P R ODUC T S UMMAR Y
V DS S
S uper high dense cell design for low R DS (ON ).
R DS (ON) ( m Ω ) Max
ID
R ugged and reliable.
S urface Mount P ackage.
E S D P rotected.
27.5 @ V G S = 4.0V
20V
5A
38 @ V G S = 2.5V
S1
D1/D2
S2
1
2
3
D2
D1
S OT26
Top View
6
G1
5
4
D1/D2
G1
G2
G2
S1
S2
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
V DS
20
V
Gate-S ource Voltage
V GS
10
V
Drain C urrent-C ontinuous a @ T J =25 C
b
-P ulsed
ID
5
A
IDM
24
A
Drain-S ource Diode Forward C urrent a
IS
1.25
A
Maximum P ower Dissipation a
PD
1.25
W
T J , T S TG
-55 to 150
C
R JA
100
C /W
Operating Junction and S torage
Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a
1
S T S 8215
E LE CTR ICAL CHAR ACTE R IS TICS (T A = 25 C unless otherwise noted)
Parameter
Min Typ C Max Unit
S ymbol
Condition
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = 250uA
Zero Gate Voltage Drain Current
IDS S
V DS = 16V, V GS = 0V
1
uA
Gate-Body Leakage
IGS S
V GS = 10V,V DS = 0V
10
uA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = 250uA
0.9
1.5
V
Drain-S ource On-S tate R esistance
R DS (ON)
V GS = 4.0V, ID = 5A
23
27.5
m ohm
V GS = 2.5V, ID = 3A
30
38
m ohm
V DS = 5.0V, ID= 5A
16
S
540
PF
160
PF
100
PF
15
ns
20
ns
36
ns
11
ns
V DS =10V, ID =5A,V GS =4V
6.4
nC
V DS =10V, ID =5A,V GS =2.5V
4.6
nC
1.1
nC
2.8
nC
OFF CHAR ACTE R IS TICS
20
V
ON CHAR ACTE R IS TICS b
gFS
Forward Transconductance
0.5
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
V DS =8V, V GS = 0V
f =1.0MH Z
c
tD(ON)
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
V DD = 10V,
ID = 1A,
V GE N = 4.5V,
R L = 10 ohm
R GE N = 10 ohm
V DS =10V, ID = 5 A
V GS =4V
2
S T S 8215
E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
Parameter
C
Min Typ Max Unit
Condition
S ymbol
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Diode Forward Voltage
V GS = 0V, Is =1.25A
VSD
0.76
1.2
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
15
20
V G S =8V
V G S =3V
12
V G S =2.5V
I D , Drain C urrent (A)
ID , Drain C urrent(A)
16
V G S =2V
12
8
4
V G S =1.5V
0.5
1.5
1.0
2.0
2.5
6
T j=125 C
3.0
25 C
V DS , Drain-to-S ource Voltage (V )
0.8
1.2
1.6
2.0
2.4
F igure 2. Trans fer C haracteris tics
60
R DS (ON) , On-R es is tance
Normalized
1.5
50
R DS (on) (m Ω)
0.4
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
40
V G S =2.5V
30
20
V G S =4V
10
1
-55 C
3
0
0.0
0
0
9
1
4
8
12
16
1.4
1.2
1.1
V G S =2.5V
I D =3A
1.0
0
20
V G S =4V
I D =5A
1.3
0
25
50
75
100
125
150
T j( C )
I D , Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
3
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
V
B V DS S , Normalized
Drain-S ource B reakdown V oltage
1.4
V DS =V G S
I D =250uA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
0
25
50
75
1.20
I D =250uA
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25
100 125 150
0
25
50
75
100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
20.0
60
I D =5A
Is , S ource-drain current (A)
50
R DS (on) (m Ω)
6
V th, Normalized
G ate-S ource T hres hold V oltage
S T S 8215
40
25 C
30
20
125 C
75 C
10
0
0
1
2
4
6
5.0
25 C
75 C
1.0
8
V G S , G ate-S ource Voltage (V )
125 C
10.0
0
0.3
0.6
0.9
1.2
1.5
V S D , B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
4
S T S 8215
V G S , G ate to S ource V oltage (V )
600
C is s
C , C apacitance (pF )
500
6
400
300
C os s
200
C rs s
100
5
V DS =10V
I D =5A
4
3
2
1
0
0
0
2
4
8
6
10
0
12
1
4
5
6
7
8
Qg, T otal G ate C harge (nC )
V DS , Drain-to S ource Voltage (V )
F igure 10. G ate C harge
F igure 9. C apacitance
50
600
Tr
100
60
TD(off)
I D , Drain C urrent (A)
S witching T ime (ns )
3
2
TD(on)
Tf
10
V DS =10V ,ID=1A
1
30
10
R
60 100 300 600
im
it
10
10
0m
ms
s
DC
1
0.1
0.03
6 10
)L
1s
V G S =4.5V
1
D
ON
S(
V G S =10V
S ingle P ulse
T A =25 C
0.1
R g, G ate R es is tance ( Ω)
1
10
60
V DS , Drain-S ource V oltage (V )
F igure 12. Maximum S afe
O perating Area
F igure 11.s witching characteris tics
Thermal Resistance
Normalized Transient
10
1
0.5
0.2
P DM
0.1
0.1
t1
t2
0.05
0.02
0.01
0.01
0.00001
1.
2.
3.
4.
Single Pulse
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
5
10
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
100
1000
S T S 8215
PA C K A G E O U T L I N E D I M E N S I O N S
SOT26
7
S T S 8215
SOT 26 Tape and Reel Data
SOT 26 Carrier Tape
+0.10
О1.50 0.00
3.50 + 0.05
4.00 + 0.10
1.75 + 0.10
2.00 + 0.05
8.0 + 0.30
A
B
B
A
5 M
ax
0.25 + 0.05
+0.10
О1.00 0.00
R0
4.00 + 0.10
3.3 + 0.1
.3
R0
.3
5
Bo 3.2 + 0.1
R0
.
3
SECTION B-B
Ko 1.5 + 0.1
SECTION A-A
SOT 26 Reel
О60 + 0.5
О178.0 + 0.5
1.50
10.6
2.2 + 0.5
9.0
О13.5 + 0.5
SCALE 2:1
SOT 26
8
R0
.3
+1.5
-0
M
ax