SavantIC Semiconductor Product Specification 2N6077 2N6078 2N6079 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·High breakdown voltage APPLICATIONS ·For horizontal deflection output stages of TV’s and CRT’s PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS 2N6077 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N6078 Open emitter 275 2N6079 375 2N6077 275 2N6078 Emitter-base voltage UNIT 300 Open base 2N6079 VEBO VALUE 250 V V 350 Open collector 6 V 7 A 45 W IC Collector current PD Total Power Dissipation Tj Junction temperature 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.28 UNIT /W SavantIC Semiconductor Product Specification 2N6077 2N6078 2N6079 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6077 VCEO(SUS) Collector-emitter sustaining voltage 2N6078 MIN TYP. MAX UNIT 275 IC=0.1A ;IB=0 2N6079 V 250 350 VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 1.2 V ICEO Collector cut-off current VCE= Rated VCEO; IB=0 2.0 mA ICEX Collector cut-off current VCE=Rated VCEO; VBE(off)=1.5V TC=125 0.1 1.0 mA ICBO Collector cut-off current VCB=Rated VCBO; IE=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 1.0 mA hFE DC current gain IC=1.2A ; VCE=1V Transition frequency IC=0.5A;VCE=10V;f=1MHz fT 2 12 70 7 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2N6077 2N6078 2N6079