SavantIC Semiconductor Product Specification 2SA1110 Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SC2590 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency fT ·Optimum for the driver stage of a 40w to 60w output amplifier APPLICATIONS ·For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -0.5 A ICM Collector current-Peak -1.0 A PC Collector power dissipation 1.2* W Tj Junction temperature 150 Tstg Storage temperature -55~150 Note) *: Without heat sink TC=25 SavantIC Semiconductor Product Specification 2SA1110 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-100µA;IB=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-10µA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-0.3A ;IB=-30mA -1.0 V VBEsat Base-emitter saturation voltage IC=-0.3A ;IB=-30mA -1.2 V hFE-1 DC current gain IC=-150mA ; VCE=-10V 65 hFE-2 DC current gain IC=-0.5A ; VCE=-5V 50 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz fT Transition frequency IC=-50mA ; VCB=-10V, hFE-1 Classifications P Q R S 65-110 90-155 130-220 185-330 2 MIN TYP. MAX UNIT 330 100 30 200 pF MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SA1110 SavantIC Semiconductor Product Specification 2SA1110 Silicon PNP Power Transistors 4