ISC 2SC1567A

Inchange Semiconductor
Product Specification
2SC1567 2SC1567A
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-126 package
·Complement to type 2SA794/794A
·High collector to emitter voltage VCEO
APPLICATIONS
·For low-frequency high power
driver applications
·Optimum for the driver stage of low-frequency
and 40 W to 100 W output amplifier
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SC1567
VCBO
Collector-base voltage
100
Open base
2SC1567A
VEBO
Emitter-base voltage
V
120
2SC1567
Collector- emitter voltage
UNIT
100
Open emitter
2SC1567A
VCEO
VALUE
V
120
Open collector
5
V
0.5
A
1
A
1.2
W
IC
Collector current
ICM
Collector current-peak
PD
Total power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~+150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC1567 2SC1567A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SC1567
V(BR)CEO
Collector-emitter
breakdown voltage
TYP.
MAX
UNIT
100
IC=0.1mA ;IB=0
V
120
2SC1567A
V(BR)EBO
MIN
Emitter-base breakdown voltage
IE=1μA ;IC=0
VCEsat
Collector-emitter saturation voltage
IC=0.5A ;IB=50m A
0.2
0.4
V
VBEsat
Base-emitter saturation voltage
IC=0.5A ;IB=50m A
0.85
1.2
V
hFE-1
DC current gain
IC=150mA ; VCE=10V
65
hFE-2
DC current gain
IC=0.5A ; VCE=5V
50
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=50mA ; VCE=10V,f=200MHz
‹
hFE-1 Classifications
R
S
130-220
185-330
2
5
V
330
11
pF
120
MHz
Inchange Semiconductor
Product Specification
2SC1567 2SC1567A
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3