ISC 2SA794A

Inchange Semiconductor
Product Specification
2SA794 2SA794A
Silicon PNP Power Transistors
·
DESCRIPTION
·With TO-126 package
·Complement to type 2SC1567/1567A
·High collector-emitter voltage VCEO
APPLICATIONS
·For low frequency output driver
·Optimum for the driver stage of low
frequency and 40W to 100W output
amplifier
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SA794
VCBO
Collector-base voltage
-100
Open base
2SA794A
VEBO
Emitter-base voltage
V
-120
2SA794
Collector- emitter voltage
UNIT
-100
Open emitter
2SA794A
VCEO
VALUE
V
-120
Open collector
-5
V
-0.5
A
-1
A
1.2*
W
IC
Collector current
ICM
Collector current-peak
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~+150
℃
*Without heat sink
TC=25℃
Inchange Semiconductor
Product Specification
2SA794 2SA794A
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SA794
V(BR)CEO
Collector-emitter
breakdown voltage
TYP.
MAX
UNIT
-100
IC=-100μA ;IB=0
2SA794A
V(BR)EBO
MIN
V
-120
Emitter-base breakdown voltage
IE=-1μA ;IC=0
VCEsat
Collector-emitter saturation voltage
IC=-500mA ;IB=-50mA
-0.2
-0.4
V
VBEsat
Base-emitter saturation voltage
IC=-500mA ;IB=-50mA
-0.85
-1.2
V
hFE-1
DC current gain
IC=-150mA ; VCE=-10V
90
hFE-2
DC current gain
IC=-500mA ; VCE=-5V
50
COB
Collector output capacitance
IE=0 ; VCB=-10V;f=1MHz
20
pF
Transition frequency
VCB=-10V;IE=50mA;f=200MHz
120
MHz
fT
‹
hFE-1 Classifications
Q
R
90-155
130-220
2
-5
V
220
Inchange Semiconductor
Product Specification
2SA794 2SA794A
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3