SavantIC Semiconductor Product Specification 2SA1129 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC2654 ·Low collector saturation votage APPLICATIONS ·For low-frequency power amplifiers and mid-speed switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -30 V VCEO Collector-emitter voltage Open base -30 V VEBO Emitter-base voltage Open collector -7 V IC Collector current (DC) -7 A ICM Collector current-peak -15 A IB Base current (DC) -3.5 A PT Total power dissipation TC=25 40 Ta=25 1.5 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SA1129 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat)-1 Collector-emitter saturation voltage IC=-3A ;IB=-0.1A -0.3 V VCE(sat)-2 Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -0.6 V VBE(sat)-1 Base-emitter saturation voltage IC=-3A ;IB=-0.1A -1.5 V VBE(sat)-2 Base-emitter saturation voltage IC=-5A ;IB=-0.5A -2.0 V ICBO Collector cut-off current VCB=-30V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 µA hFE-1 DC current gain IC=-3A ; VCE=-1V 40 hFE-2 DC current gain IC=-5A ; VCE=-1V 20 200 Switching times ton Turn-on time ts Storage time tf Fall time IC=-5.0A IB1=-0.5 A ,IB2=0.5A VCC=20V, RL=4.0? hFE-1 Classifications M L K 40-80 60-120 100-200 2 1.0 µs 2.5 µs 1.0 µs SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 2SA1129