SAVANTIC 2SD1277

SavantIC Semiconductor
Product Specification
2SD1277 2SD1277A
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220Fa package
·Complement to type 2SB951/951A
·High DC current gain
·High-speed switching
APPLICATIONS
·For medium speed power switching
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
2SD1277
VCBO
Collector-base voltage
60
Open base
2SD1277A
VEBO
Emitter-base voltage
IC
V
80
2SD1277
Collector-emitter voltage
UNIT
60
Open emitter
2SD1277A
VCEO
VALUE
V
80
Open collector
7
V
Collector current (DC)
8
A
ICM
Collector current-Peak
12
A
PC
Collector power dissipation
TC=25
45
Ta=25
2
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SD1277 2SD1277A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
V(BR)CEO
PARAMETER
Collector-emitter
breakdown voltage
CONDITIONS
2SD1277
MIN
TYP.
MAX
UNIT
60
IC=30mA , IB=0
2SD1277A
V
80
VCEsat
Collector-emitter saturation voltage
IC=4A; IB=8mA
1.5
V
VBEsat
Base-emitter saturation voltage
IC=4A ;IB=8mA
2
V
0.1
mA
2
mA
ICBO
Collector
cut-off current
2SD1277
VCB=60V ;IE=0
2SD1277A
VCB=80V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=8A ; VCE=3V
500
hFE-2
DC current gain
IC=4A ; VCE=3V
2000
Transition frequency
IC=0.5A; VCE=10V;f=1MHz
fT
10000
20
MHz
Switching times
ton
Turn-on time
tstg
Storage time
IC=4A ;IB1=8mA
IB2=-8mA;VCC=50V
Fall time
tf
hFE-2 Classifications
Q
R
2000-5000
4000-10000
2
0.5
µs
4.0
µs
1.0
µs
SavantIC Semiconductor
Product Specification
2SD1277 2SD1277A
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3