SavantIC Semiconductor Product Specification 2SD1275 2SD1275A Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·Complement to type 2SB949/949A ·High DC current gain ·High-speed switching APPLICATIONS ·For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS 2SD1275 VCBO Collector-base voltage VEBO Collector-emitter voltage V 80 2SD1275 60 Open base 2SD1275A Emitter-base voltage UNIT 60 Open emitter 2SD1275A VCEO VALUE V 80 Open collector 5 V IC Collector current 2 A ICM Collector current-Peak 4 A PC Collector power dissipation TC=25 35 Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD1275 2SD1275A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SD1275 MIN TYP. MAX UNIT 60 IC=30mA , IB=0 V 80 2SD1275A Collector-emitter saturation voltage IC=2A; IB=8mA 2.5 V VBE Base-emitter voltage VCE=4V; IC=2A 2.8 V ICBO Collector cut-off current 1.0 mA 2.0 mA 2.0 mA ICEO 2SD1275 VCB=60V; IE=0 2SD1275A VCB=80V; IE=0 Collector 2SD1275 VCE=30V; IB=0 cut-off current 2SD1275A VCE=40V; IB=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=1A ; VCE=4V 1000 hFE-2 DC current gain IC=2A ; VCE=4V 2000 Transition frequency IC=0.5A; VCE=10V;f=1MHz fT 10000 20 MHz 0.5 µs 4.0 µs 1.0 µs Switching times ton Turn-on time ts Storage time tf Fall time IC=2A ;IB1=8mA IB2=-8mA;VCC=50V hFE-2 Classifications Q R 2000-5000 4000-10000 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1275 2SD1275A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3