SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB947 2SB947A DESCRIPTION ·With TO-220Fa package ·High speed switching ·Low collector saturation voltage APPLICATIONS ·For low-voltage switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2SB947 VCBO Collector-base voltage -20 Open base 2SB947A VEBO Emitter-base voltage V -50 2SB947 Collector-emitter voltage UNIT -40 Open emitter 2SB947A VCEO VALUE V -40 Open collector -5 V IC Collector current -10 A ICM Collector current-peak -15 A PC Collector power dissipation Ta=25 2 TC=25 35 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB947 2SB947A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO PARAMETER Collector-emitter voltage CONDITIONS 2SB947 MIN TYP. MAX UNIT -20 IC=-10mA; IB=0 V -40 2SB947A VCEsat Collector-emitter saturation voltage IC=-7A ;IB=-0.23A -0.6 V VBEsat Base-emitter saturation voltage IC=-7A ;IB=-0.23A -1.5 V VCB=-40V; IE=0 -50 µA VCB=-50V; IE=0 -50 µA -50 µA ICBO Collector cut-off current 2SB947 2SB947A IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-0.1A ; VCE=-2V 45 hFE-2 DC current gain IC=-2A ; VCE=-2V 90 Transition frequency IC=-0.5A; VCE=-10V,f=10MHz 150 MHz Collector output capacitance f=1MHz ; VCB=-10V 200 pF 0.1 µs 0.5 µs 0.1 µs fT COB ton Trun-on time ts Storage time tf Fall time IC=-2A ;IB1=-IB2=-66mA hFE-2 Classifications Q P 90-180 130-260 2 260 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB947 2SB947A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB947 2SB947A 4 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB947 2SB947A 5