SAVANTIC 2SC1418

SavantIC Semiconductor
Product Specification
2SC1418
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
·Large collector power dissipation
APPLICATIONS
·For medium power amplifier applicattions
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
50
V
VCEO
Collector-emitter voltage
Open base
50
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
2
A
ICM
Collector current-peak
3
A
PC
Collector power dissipation
20
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SC1418
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified.
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=30mA ,IB=0
50
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ,IE=0
50
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ,IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=1A; IB=0.1A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=1A; IB=0.1A
1.5
V
ICBO
Collector cut-off current
VCB=50V; IE=0
100
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
µA
hFE
DC current gain
IC=1A ; VCE=4V
Transition frequency
IC=0.5A ; VCE=10V
fT
CONDITIONS
2
MIN
TYP.
35
MAX
UNIT
320
5
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
2SC1418