SavantIC Semiconductor Product Specification 2SC1881 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain APPLICATIONS ·High gain amplifier power switching PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 7 V IC Collector current-DC 3 A ICM Collector current-Pulse 6 A PC Collector power dissipation 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC1881 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=50mA,RBE=< 60 V V(BR)EBO Emitter-base breakdown voltage IE=50mA, IC=0 7 V Collector-emitter saturation voltage IC=2.5A ,IB=20mA 1.2 V ICBO Collector cut-off current VCB=60V, IE=0 0.2 mA ICEO Collector cut-off current VCE=30V, ,RBE=< 0.4 mA hFE-1 DC current gain IC=1.5A ; VCE=1.5V 1000 hFE-2 DC current gain IC=2.5A ; VCE=1.5V 500 VCEsat ton Turn-on time toff Turn-off time CONDITIONS VCC=11V, IC=2A IB1=-IB2=8mA 2 MIN TYP. MAX UNIT 1 µs 5 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC1881