SavantIC Semiconductor Product Specification 2SC2075 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High transition frequency ·Wide area of safe operation APPLICATIONS ·27MHz power amplifier applications ·Recommended for output stage application of AM 4W transmitter PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 4 V IC Collector current 4 A IE Emitter current -4 A PC Collector power dissipation 10 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC2075 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 1.5 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3 A V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=1.0mA; IC=0 4 V ICBO Collector cut-off current VCB=30V;IE=0 10 µA IEBO Emitter cut-off current VEB=4V; IC=0 10 µA hFE-1 DC current gain IC=0.5A ; VCE=5V 25 hFE-2 DC current gain IC=3A ; VCE=2V 15 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 40 pF fT Transition frequency IC=0.5A ; VCE=5V 100 MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC2075