SAVANTIC 2SD2029

SavantIC Semiconductor
Product Specification
2SD2029
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PL package
·Complement to type 2SB1347
·Wide area of safe operation
·High transition frequency
APPLICATIONS
·Optimum for the output stage of a
Hi-Fi audio amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
160
V
VCEO
Collector-emitter voltage
Open base
160
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
12
A
ICM
Collector current-peak
20
A
PC
Collector power dissipation
Ta=25
3.5
W
TC=25
120
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SD2029
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=8A ;IB=0.8A
2.0
V
VBE
Base-emitter voltage
IC=8A ; VCE=5V
1.8
V
ICBO
Collector cut-off current
VCB=160V; IE=0
50
µA
IEBO
Emitter cut-off current
VEB=3V; IC=0
50
µA
hFE-1
DC current gain
IC=20mA ; VCE=5V
20
hFE-2
DC current gain
IC=1A ; VCE=5V
60
hFE-3
DC current gain
IC=8A ; VCE=5V
20
Transition frequency
IC=0.5A ; VCE=5V;f=1MHz
20
MHz
Collector output capacitance
IE=0;f=1MHz;VCB=10V
210
pF
fT
COB
CONDITIONS
hFE-2 classifications
Q
S
P
60-120
80-160
100-200
2
MIN
TYP.
MAX
160
UNIT
V
200
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.50mm)
3
2SD2029
SavantIC Semiconductor
Product Specification
2SD2029
Silicon NPN Power Transistors
4