SAVANTIC 2SC2749

SavantIC Semiconductor
Product Specification
2SC2749
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·High speed switching
·High VCBO
·Low saturation voltage
APPLICATIONS
·For high voltage,high speed power
switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
10
A
IB
Base current
5
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SC2749
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=10m A ; IB=0
400
V
V(BR)CBO
Collector-base breakdown voltage
IC=1m A ; IE=0
500
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1m A ; IC=0
7
V
VCE(sat)
Collector-emitter saturation voltage
IC=6A; IB=1.2A
1.0
V
VBE(sat)
Base-emitter saturation voltage
IC=6A; IB=1.2A
1.5
V
ICBO
Collector cut-off current
VCB=400V IE=0
100
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
µA
hFE-1
DC current gain
IC=1A ; VCE=5V
15
hFE -2
DC current gain
IC=5A ; VCE=5V
8
2
MIN
TYP.
MAX
80
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
2SC2749