Inchange Semiconductor Product Specification 2SC2979 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High VCBO ・Fast switching speed. APPLICATIONS ・For high voltage ,high speed and high power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 体 导 半 Absolute maximum ratings(Ta=25℃) 固电 SYMBOL VCBO VCEO VEBO EM S E NG PARAMETER D N O IC R O T UC CONDITIONS VALUE UNIT Collector-base voltage Open emitter 900 V Collector-emitter voltage Open base 800 V Emitter-base voltage Open collector 7 V A H C IN IC Collector current 3 A ICM Collector current-peak 6 A IB Base current 1.5 A PC Collector dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2979 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; RBE=∞,L=100mH V(BR)EBO Base-emitter breakdown voltage IE=10mA ; IC=0 VCEsat Collector-emitter saturation voltage IC=0.75A; IB=0.15A 1.0 V VBEsat Base-emitter saturation voltage IC=0.75A; IB=0.15A 1.5 V ICBO Collector cut-off current VCB=750V ;IE=0 100 μA ICEO Collector cut-off current VCE=650V; RBE=∞ 100 μA hFE-1 DC current gain IC=0.3A ; VCE=5V hFE-2 DC current gain IC=1.5A ; VCE=5V Switching times ton tstg tf CONDITIONS 体 导 半 固电 EM S E NG Turn-on time A H C IN Storage time 2 TYP. MAX UNIT 800 V 7 V 15 R O T UC D N O IC VCC≈250V; IC=1.5A IB1=0.3A;IB2=-0.75A Fall time MIN 7 1.0 μs 3.0 μs 1.0 μs Inchange Semiconductor Product Specification 2SC2979 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC2979 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC