SavantIC Semiconductor Product Specification 2SC3748 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Low saturation voltage. ·Excellent dependence of hFE on current. ·Fast switching speed. APPLICATIONS ·Car-use inductance drivers, lamp drivers. ·Inverters drivers, conveters (strobes, flashes, FLT lighting circuits). ·Power amplifiers ·High-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 10 A ICM Collector current-peak 12 A PC Collector dissipation 2 W TC=25 30 Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC3748 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 80 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA; RBE=; 60 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V Collector-emitter saturation voltage IC=5A; IB=0.25A 0.4 V ICBO Collector cut-off current VCB=40V ;IE=0 100 µA IEBO Emitter cut-off current VEB=4V; IC=0 100 µA hFE DC current gain IC=1A ; VCE=2V Transition frequency IC=1A ; VCE=5V VCEsat fT 70 280 100 MHz 0.1 µs 0.5 µs 0.1 µs Switching times ton Turn-on time tstg Storage time tf VCC=20V; IC=5A IB1=-IB2=0.25A RL=4C Fall time hFE Classifications Q R S 70-140 100-200 140-280 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC3748 SavantIC Semiconductor Product Specification 2SC3748 Silicon NPN Power Transistors 4