SavantIC Semiconductor Product Specification 2SD1137 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SB860 APPLICATIONS ·Low frequency power amplifier TV vertical deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 4 V IC Collector current 4 A ICP Collector current-Peak 5 A PC Ta=25 1.8 TC=25 40 W Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -45~150 SavantIC Semiconductor Product Specification 2SD1137 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA; RBE=9 V(BR)EBO Emitter-base breakdown votage IE=1mA; IC=0 Collector-emitter saturation voltage IC=1 A;IB=0.1 A 1.0 ICEO Collector cut-off current VCE=80V; RBE=9 100 IEBO Collector cut-off current VEB=3.5V; IC=0 50 hFE-1 DC current gain IC=0.5A ; VCE=4V 50 250 hFE-2 DC current gain IC=50mA ; VCE=4V 25 350 VCEsat CONDITIONS 2 MIN TYP. MAX UNIT 100 V 4 V V SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SD1137 SavantIC Semiconductor Product Specification 2SD1137 Silicon NPN Power Transistors 4 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 5 2SD1137