Inchange Semiconductor Product Specification 2SD1212 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Large current capacity. ・Complement to type 2SB903 APPLICATIONS ・Suitable for relay drivers, high-speed inverters,converters, and other general large current switching applications. ・High-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 30 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 12 A ICM Collector current-peak 20 A PC Collector power dissipation 1.75 W TC=25℃ 35 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1212 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 60 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=∞ 30 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 6 V Collector-emitter saturation voltage IC=5A, IB=0.25A 0.4 V ICBO Collector cut-offcurrent VCB=40V;IE=0 0.1 mA IEBO Emitter cut-offcurrent VEB=4V;IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=2V 70 hFE-2 DC current gain IC=6A ; VCE=2V 30 Transition frequency IC=1A ; VCE=5V VCEsat fT 280 120 MHz 0.20 μs 0.50 μs 0.03 μs Switching times ton Turn-on time tstg Storage time tf IC=5A ;IB1=0.5A IB2=-0.5A; Fall time hFE-1 classifications Q R S 70-140 100-200 140-280 2 Inchange Semiconductor Product Specification 2SD1212 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SD1212 Silicon NPN Power Transistors 4