SavantIC Semiconductor Product Specification 2SD1691 Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SB1151 ·Low saturation voltage ·High total power dissipation:PT=1.3W ·Large current capability and wide SOA APPLICATIONS ·DC-DC converter ·Driver of solenoid or motor PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 5 A ICM Collector current-Peak 8 A IB Base current 1 A PD Total power dissipation Ta=25 1.3 TC=25 20 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD1691 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBEsat MAX UNIT IC=2.0A ;IB=0.2A 0.3 V Base-emitter saturation voltage IC=2.0A ;IB=0.2A 1.2 V ICBO Collector cut-off current VCB=50V; IE=0 10 µA IEBO Emitter cut-off current VEB=7V; IC=0 10 µA hFE-1 DC current gain IC=0.1A ; VCE=1V 60 hFE-2 DC current gain IC=2A ; VCE=1V 100 hFE-3 DC current gain IC=5A ; VCE=1V 50 ton Turn-on time tstg Storage time tf CONDITIONS IC=2A; IB1=-IB2=0.2A RL=5.0?;VCC@10V Fall time hFE-2 Classifications M L K 100-200 160-320 200-400 2 MIN TYP. 400 0.2 1.0 µs 1.1 2.5 µs 0.2 1.0 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SD1691