SavantIC Semiconductor Product Specification 2SB747 Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SD812 ·Wide area of safe operation APPLICATIONS ·High power amplifier applications ·Suitable for 15~20W home stereo output amplifier and voltage regulator PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -5 A ICM Collector current-peak -8 A PC Collector dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -50~150 TC=25 SavantIC Semiconductor Product Specification 2SB747 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBE CONDITIONS MAX UNIT IC=-3A; IB=-0.3A -2.0 V Base-emitter on voltage IC=-3A ; VCE=-5V -1.8 V ICBO Collector cut-off current VCB=-80V; IE=0 -50 µA IEBO Emitter cut-off current VEB=-3V; IC=0 -50 µA hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE-2 DC current gain IC=-1A ; VCE=-5V 40 hFE-3 DC current gain IC=-3A ; VCE=-5V 20 COB Output capacitance IE=0 ; VCB=-10V; f=1MHz fT Transition frequency IC=-0.5A ; VCE=-5V hFE-2Classifications R Q P 40-80 60-120 100-200 2 MIN TYP. 200 190 pF 7 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 2SB747