SavantIC Semiconductor Product Specification 2SB628 Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·High VCEO APPLICATIONS ·Low frequency power amplifier color TV vertical deflection output PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160 V VCEO Collector-emitter voltage Open base -160 V VEBO Emitter-base voltage Open collector -5 V -1.5 A 20 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -45~150 TC=25 SavantIC Semiconductor Product Specification 2SB628 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -160 V V(BR)CBO Collector-base breakdown voltage IC=-0.1mA; IE=0 -160 V V(BR)EBO Emitter-base breakdown votage IE=-0.1mA; IC=0 -5 V Collector-emitter saturation voltage IC=-0.3 A;IB=-30m A -1.0 V VBE Base-emitter voltage IC=-0.3A ; VCE=-4V -1.0 V ICBO Collector cut-off current VCB=-120V; IE=0 -1 µA IEBO Emitter cut-off current VEB=-4V; IC=0 -1 µA hFE DC current gain IC=-0.3A ; VCE=-5V Transition frequency IC=-0.3A ; VCE=-5V VCEsat fT CONDITIONS 2 MIN TYP. 40 MAX UNIT 200 40 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SB628