SavantIC Semiconductor Product Specification 2SD768 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SB727 ·DARLINGTON APPLICATIONS ·For medium speed and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 6 A ICM Collector current-Peak 10 A PC Collector dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -50~150 TC=25 SavantIC Semiconductor Product Specification 2SD768 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA; RBE=; V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0 VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=6mA 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=6A; IB=60mA 3.0 V VBEsat-1 Base-emitter saturation voltage IC=3A; IB=6mA 2.0 V VBEsat-2 Base-emitter saturation voltage IC=6A; IB=60mA 3.5 V ICBO Collector cut-off current VCB=120V; IE=0 100 µA ICEO Collector cut-off current VCE=100V; RBE=; 10 µA hFE DC current gain IC=3A ; VCE=3V 120 V 7 V 1000 20000 Switching times ton Turn-on time 1.0 µs 3.0 µs IC=3A;IB1=-IB2=6mA toff Turn-off time 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 2SD768