ISC 2SB772

Inchange Semiconductor
Product Specification
2SB772
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-126 package
・Complement to type 2SD882
APPLICATIONS
・Suited for the output stage of 3 watts
audio amplifier ,voltage regulator ,DCDC converter and relay driver
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-40
V
VCEO
Collector-emitter voltage
Open base
-30
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current (DC)
-3
A
ICM
Collector current-Peak
-7
A
PD
Total power dissipation
Ta=25℃
1.0
TC=25℃
10
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SB772
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-2.0A; IB=-0.2A
-0.3
-0.5
V
VBEsat
Base-emitter saturation voltage
IC=-2.0A ;IB=-0.2A
-1.0
-2.0
V
ICBO
Collector cut-off current
VCB=-30V; IE=0
-1.0
μA
IEBO
Emitter cut-off current
VEB=-3V; IC=0
-1.0
μA
hFE-1
DC current gain
IC=-20mA ; VCE=-2V
30
hFE-2
DC current gain
IC=-1A ; VCE=-2V
60
Transition frequency
IC=-0.1A ; VCE=-5V
80
MHz
Collector output capacitance
IE=0; f=1MHz ; VCB=-10V
55
pF
fT
COB
‹
CONDITIONS
hFE-2 Classifications
R
Q
P
E
60-120
100-200
160-320
200-400
2
MIN
TYP.
MAX
-30
UNIT
V
400
Inchange Semiconductor
Product Specification
2SB772
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
2SB772
Silicon PNP Power Transistors
4
Inchange Semiconductor
Product Specification
2SB772
Silicon PNP Power Transistors
5