SavantIC Semiconductor Product Specification 2SD953 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Built-in damper diode ·High voltage capability APPLICATIONS ·Line-operated horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage Open emitter VEBO Emitter-base voltage Open collector VALUE UNIT 1500 V 5 V IC Collector current 5 A ICM Collector current-peak 7 A PT Total power dissipation 95 W Tj Junction temperature 130 Tstg Storage temperature -65~130 TC=25 SavantIC Semiconductor Product Specification 2SD953 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX Emitter-base breakdown voltage IE=500m A;IC=0 VCEsat Collector-emitter saturation voltage IC=4.5 A;IB=2 A 5.0 V VBEsat Base-emitter saturation voltage IC=4.5 A;IB=2 A 1.5 V VCB=750V;IE=0 0.1 ICBO 5 UNIT V Collector cut-off current mA VCB=1500V;IE=0 1.0 hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=4A ; VCE=10V 3 Diode forward voltage IF=5A VF tf 1.6 Fall time V 0.8 µs IC=4A;IBend=2A;LB=10µH ts 13.5 Storage time 2 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SD953