SAVANTIC BD537

SavantIC Semiconductor
Product Specification
BD533/535/537
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·Complement to type BD534/536/538
·Low saturation voltage
APPLICATIONS
·For medium power linear and
switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
BD533
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
BD535
Open emitter
Emitter-base voltage
60
BD537
80
BD533
45
BD535
UNIT
45
Open base
BD537
VEBO
VALUE
60
V
V
80
Open collector
5
V
IC
Collector current
8
A
IE
Emitter current
8
A
IB
Base current
1
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
TC=25
SavantIC Semiconductor
Product Specification
BD533/535/537
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat-1
Collector-emitter saturation voltage
IC=2 A;IB=0.2 A
VCEsat-2
Collector-emitter saturation voltage
IC=6 A;IB=0.6 A
Base-emitter on voltage
IC=2A ; VCE=2V
VBE
ICBO
ICES
Collector cut-off current
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
BD533
VCB=45V; IE=0
BD535
VCB=60V; IE=0
BD537
VCB=80V; IE=0
BD533
VCE=45V; VBE=0
BD535
VCE=60V; VBE=0
BD537
VCE=80V; VBE=0
hFE-3
DC current gain
(All device)
hFE-4
fT
DC current gain
(All device)
Transition frequency
MAX
UNIT
0.8
V
0.8
V
1.5
V
0.1
mA
0.1
mA
1
mA
20
IC=10mA ; VCE=5V
BD537
DC current gain
TYP.
VEB=5V; IC=0
BD533/535
hFE-2
MIN
15
IC=0.5A ; VCE=2V
Group: J
40
30
75
40
100
IC=2A ; VCE=2V
Group: K
Group: J
15
IC=3A ; VCE=2V
Group: K
20
IC=0.5A ; VCE=1V
2
3
12
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
BD533/535/537