SavantIC Semiconductor Product Specification 2SC2794 Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Low collector saturation voltage APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter -base voltage Open collector 5 V IC Collector current (DC) 2 A ICM Collector current-Peak 6 A PC Collector power dissipation 25 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 SavantIC Semiconductor Product Specification 2SC2794 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A 0.6 V VBE Base-emitter on voltage IC=1A ; VCE=2V 1.3 V ICBO Collector cut-off current VCB=60V; IE=0 100 µA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE-1 DC current gain IC=150mA ; VCE=2V 50 hFE-2 DC current gain IC=1A ; VCE=2V 25 Transition frequency IC=100mA; VCE=5V fT CONDITIONS 2 MIN TYP. MAX 60 UNIT V 40 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC2794